參數(shù)資料
型號(hào): CAT40C00GYETE13
元件分類(lèi): EEPROM
英文描述: 128-Bit Serial EEPROM
中文描述: 128位串行EEPROM
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 631K
代理商: CAT40C00GYETE13
DsconinuedPat
CAT24C00
3
Doc. No. 1027, Rev. O
2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Write Cycle Limits
Symbol
Parameter
Min
Typ
Max
Units
WR
Write Cycle Time
5
ms
A.C. CHARACTERISTICS
V
CC
= 1.8 V to 5.5 V, unless otherwise specified.
Read & Write Cycle Limits
Symbol
Parameter
1.8 V - 6.0 V
2.5 V - 6.0 V
Min Max Min
Max
Units
SCL
T
I(1)
Noise Suppression Time
Constant at SCL, SDA Inputs
100
100
ns
AA
SCL Low to SDA Data Out
and ACK Out
3.5
1
μ
BUF(1)
Time the Bus Must be Free Before
a New Transmission Can Start
4.7
1.2
μ
HD:STA
Start Condition Hold Time
4
0.6
μ
μ
μ
μ
LOW
Clock Low Period
4.7
1.2
HIGH
Clock High Period
4
0.6
SU:STA
Start Condition Setup Time
(for a Repeated Start Condition)
4.7
0.6
HD:DAT
Data In Hold Time
0
0
ns
SU:DAT
R(1)
F(1)
Data In Setup Time
50
50
ns
SDA and SCL Rise Time
1
0.3
μ
SDA and SCL Fall Time
300
300
ns
SU:STO
Stop Condition Setup Time
4
0.6
μ
DH
Data Out Hold Time
100
100
ns
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated.
The write cycle time is the time from a valid stop
condition of a write sequence to the end of the internal
program/erase cycle. During the write cycle, the bus
interface circuits are disabled, SDA is allowed to remain
high, and the device does not respond to its slave
address.
Power-Up Timing
(1)(2)
Symbol
Parameter
Min
Typ
Max
Units
PUR
PUW
Power-up to Read Operation
Power-up to Write Operation
1
1
ms
ms
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