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參數(shù)資料
| 型號： | CAT28F102 |
| 英文描述： | 1 Megabit CMOS Flash Memory(1M(64K x 16位）位CMOS閃速存儲器) |
| 中文描述： | 1兆位的CMOS快閃記憶體（100萬（64K的× 16位）位的CMOS閃速存儲器） |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 159K |
| 代理商： | CAT28F102 |
CAT28F102
6
Doc. No. 25038-0A 2/98 F-1
A.C. CHARACTERISTICS, Program/Erase Operation
V
CC
= +5V
±
10%, unless otherwise specified.
JEDEC
Standard
28F102-45
V
CC
= +5V
±
5%
28F102-55
V
CC
= +5V
±
5%
28F102-70 28F102-90
Symbol
t
AVAV
Symbol
t
WC
Parameter
Write Cycle Time
Min. Max.
45
Min.
55
Max.
Min. Max. Min.
70
Max.
Unit
ns
90
t
AVWL
t
AS
Address Setup Time
0
0
0
0
ns
t
WLAX
t
AH
Address Hold Time
30
30
35
40
ns
t
DVWH
t
DS
Data Setup Time
30
30
35
40
ns
t
WHDX
t
DH
Data Hold Time
10
10
10
10
ns
t
ELWL
t
CS
CE
Setup Time
0
0
0
0
ns
t
WHEH
t
CH
CE
Hold Time
0
0
0
0
ns
t
WLWH
t
WP
WE
Pulse Width
30
30
35
40
ns
t
WHWL
t
WPH
WE
High Pulse Width
20
20
20
20
ns
t
WHWH1(2)
-
Program Pulse Width
10
10
10
10
μ
s
t
WHWH2(2)
-
Erase Pulse Width
9.5
9.5
9.5
9.5
ms
t
WHGL
-
Write Recovery Time
Before Read
6
6
6
6
μ
s
t
GHWL
-
Read Recovery Time
Before Write
0
0
0
0
μ
s
t
VPEL
-
V
PP
Setup Time to
CE
100
100
100
100
ns
28F102-45
28F102-55
28F102-70
28F102-90
Parameter
Min.
Typ. Max. Min.
Typ. Max. Min. Typ.
Max. Min. Typ.
Max.
Unit
Chip Erase Time
(3)(5)
Chip Program Time
(3)(4)
1 6.5 1 6.5 1 6.5 1 6.5
0.5
10
0.5
10
0.5
10
0.5
10
sec
sec
Note:
(1) Please refer to Supply characteristics for the value of V
PPH
and V
PPL
. The V
PP
supply can be either hardwired or switched. If V
PP
is
switched, V
PPL
can be ground, less than V
CC
+ 2.0V or a no connect with a resistor tied to ground.
(2) Program and Erase operations are controlled by internal stop timers.
(3) ‘Typicals’ are not guaranteed, but based on characterization data. Data taken at 25
°
C, 12.0V V
PP
.
(4) Minimum byte programming time (excluding system overhead) is 16
μ
s (10
μ
s program + 6
μ
s write recovery), while maximum is 400
μ
s/
byte (16
μ
s x 25 loops). Max chip programming time is specified lower than the worst case allowed by the programming algorithm since
most bytes program significantly faster than the worst case byte.
(5) Excludes 00H Programming prior to Erasure.
Erase and Programming Performance
(1)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28F512G12 | 功能描述:閃存 64 X 8 512K 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G-12 | 制造商:ON Semiconductor 功能描述:Flash Memory IC |
| CAT28F512G-12T | 功能描述:閃存 512K-Bit CMOS 閃存 Memory RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G90 | 功能描述:閃存 64 X 8 512K 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G-90 | 制造商:ON Semiconductor 功能描述:IC FLASH 512KBIT 90NS LCC-32 |
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