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參數(shù)資料
| 型號： | CAT28C64BJI15 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | PROM |
| 英文描述： | 8K X 8 EEPROM 5V, 150 ns, PDSO28 |
| 封裝： | SOIC-28 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大小： | 78K |
| 代理商： | CAT28C64BJI15 |
CAT28C64B
8
Doc. No. MD-1011, Rev. H
2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
ADDRESS
CE
OE
WE
DATA OUT
tAS
DATA IN
DATA VALID
HIGH-Z
tAH
tWC
tOEH
tDH
tDS
tOES
tBLC
tCH
tCS
tCW
Page Write
The page write mode of the CAT28C64B (essentially an
extended BYTE WRITE mode) allows from 1 to 32 bytes
of data to be programmed within a single EEPROM write
cycle. This effectively reduces the byte-write time by a
factor of 32.
Following an initial WRITE operation (
WE pulsed low, for
tWP, and then high) the page write mode can begin by
issuing sequential
WE pulses, which load the address
and data bytes into a 32 byte temporary buffer. The page
address where data is to be written, specified by bits A5
to A12, is latched on the last falling edge of WE. Each
byte within the page is defined by address bits A0 to A4
(which can be loaded in any order) during the first and
subsequent write cycles. Each successive byte load
cycle must begin within tBLC MAX of the rising edge of the
preceding
WE pulse. There is no page write window
limitation as long as
WE is pulsed low within tBLC MAX.
Upon completion of the page write sequence,
WE must
stay high a minimum of tBLC MAX for the internal auto-
matic program cycle to commence. This programming
cycle consists of an erase cycle, which erases any data
that existed in each addressed cell, and a write cycle,
which writes new data back into the cell. A page write will
only write data to the locations that were addressed and
will not rewrite the entire page.
Figure 5. Byte Write Cycle [CE Controlled]
Figure 6. Page Mode Write Cycle
OE
CE
WE
ADDRESS
I/O
tWP
tBLC
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
BYTE n+2
LAST BYTE
tWC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28C64BJI-90 | 功能描述:電可擦除可編程只讀存儲器 (8kx8) 64K 5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT28C64BK-12 | 功能描述:電可擦除可編程只讀存儲器 (8kx8) 64K 5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT28C64BK-90 | 功能描述:電可擦除可編程只讀存儲器 (8kx8) 64K 5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT28C64BKA-12 | 功能描述:電可擦除可編程只讀存儲器 (8kx8) 64K 5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT28C64BKI-12 | 功能描述:電可擦除可編程只讀存儲器 (8kx8) 64K 5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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