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參數(shù)資料
| 型號： | CAT25C01 |
| 英文描述： | 1K SPI Serial CMOS EEPROM(1K位（128字x8位）SPI串行CMOS EEPROM) |
| 中文描述： | 每1000 SPI串行EEPROM中的CMOS（每1000位（128字x8位）的SPI串行EEPROM中的CMOS） |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 59K |
| 代理商： | CAT25C01 |
7
CAT25C01/02/04/08/16
Doc. No. 25067-00 5/00
Advanced Information
Figure 4. Read Instruction Timing
Byte Write
Once the device is in a Write Enable state, the user may
proceed with a write sequence by setting the
CS
low,
issuing a write instruction via the SI line, followed by the
16-bit address for 25C08/16. (only 10-bit addresses are
used for 25C08, 11-bit addresses are used for 25C16.
The rest of the bits are don't care bits) and 8-bit address
for 25C01/02/04 (for the 25C04, bit 3 of the read data
instruction contains address A8). Programming will start
after the
CS
is brought high. Figure 6 illustrates byte
write sequence.
WRITE Sequence
The CAT25C01/02/04/08/16 powers up in a Write Dis-
able state. Prior to any write instructions, the WREN
instruction must be sent to CAT25C01/02/04/08/16.
The device goes into Write enable state by pulling the
CS
low and then clocking the WREN instruction into
CAT25C01/02/04/08/16. The
CS
must be brought high
after the WREN instruction to enable writes to the
device. If the write operation is initiated immediately
after the WREN instruction without
CS
being brought
high, the data will not be written to the array because the
write enable latch will not have been properly set. Also,
for a successful write operation the address of the
memory location(s) to be programmed must be outside
the protected address field location selected by the
block protection level.
Figure 5. RDSR Instruction Timing
Note: Dashed Line= mode (1, 1)
–
– – – –
Note: Dashed Line= mode (1, 1)
–
–
–
–
SK
SI
SO
0
0
0
0
0
0
1
1
BYTE ADDRESS*
0
1
2
3
4
5
6
7
8
9
10
20
21
22
23
24
25
26
27
28
29
30
7
6
5
4
3
2
1
0
*Please check the instruction set table for address
CS
OPCODE
DATA OUT
MSB
HIGH IMPEDANCE
0
1
2
3
4
5
6
7
8
10
9
11
12
13
14
SCK
SI
DATA OUT
MSB
HIGH IMPEDANCE
OPCODE
SO
7
6
5
4
3
2
1
0
CS
0
0
0
0
0
1
0
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT25C01L | 功能描述:電可擦除可編程只讀存儲器 (128x8) 1K 2.5-6.0 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT25C01L-1.8 | 功能描述:電可擦除可編程只讀存儲器 (128x8) 1K 1.8-6.0 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT25C01LA | 功能描述:電可擦除可編程只讀存儲器 (128x8) 1K 2.5-6.0 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT25C01LI | 功能描述:電可擦除可編程只讀存儲器 (128x8) 1K 2.5-6.0 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT25C01P | 功能描述:電可擦除可編程只讀存儲器 (128x8) 1K 2.5-6.0 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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