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參數資料
| 型號： | CAT24C23VP2I-GT3 |
| 英文描述： | 32-Kb I2C CMOS Serial EEPROM |
| 中文描述： | 32 KB的的I2C的CMOS串行EEPROM |
| 文件頁數： | 2/18頁 |
| 文件大小： | 510K |
| 代理商： | CAT24C23VP2I-GT3 |
CAT24C32
2
Doc. No. 1101, Rev. G
2007 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS
(1)
Storage Temperature
Voltage on Any Pin with Respect to Ground
(2)
-65°C to +150°C
-0.5 V to +6.5 V
RELIABILITY CHARACTERISTICS
(3)
Symbol
N
END(4)
T
DR
Parameter
Endurance
Data Retention
Min
Units
1,000,000
100
Program/ Erase Cycles
Years
D.C. OPERATING CHARACTERISTICS
V
CC
= 1.8 V to 5.5 V, T = -40°C to 85°C, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Max
Units
I
CCR
Read Current
Read, f
= 400 kHz
SCL
1
mA
I
CCW
I
SB
Write Current
Write, f
= 400 kHz
SCL
All I/O Pins at GND or V
CC
1
mA
Standby Current
1
μ
A
I
L
I/O Pin Leakage
Pin at GND or V
CC
1
μ
A
V
IL
Input Low Voltage
-0.5
V
CC
x 0.3
V
V
IH
Input High Voltage
V
CC
x 0.7
V
CC
+ 0.5
V
V
OL1
Output Low Voltage
V
CC
≥
2.5 V, I
= 3.0 mA
OL
0.4
V
V
OL2
Output Low Voltage
V
CC
< 2.5 V, I
= 1.0 mA
OL
0.2
V
PIN IMPEDANCE CHARACTERISTICS
V
CC
= 1.8 V to 5.5 V, T = -40°C to 85°C, unless otherwise specified.
Symbol
Parameter
Conditions
Max
Units
C
IN(3)
SDA I/O Pin Capacitance
V
IN
= 0 V
8
pF
C
IN(3)
I
WP(5)
Input Capacitance (other pins)
V
IN
= 0 V
6
pF
WP Input Current
V
IN
< V
IH
100
μ
A
V
IN
> V
IH
1
Note:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification
is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) The DC input voltage on any pin should not be lower than -0.5 V or higher than V
+ 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than -1.5 V or overshoot to no more than V
CC
+ 1.5 V, for periods of less than 20 ns.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(4) Page Mode, V
CC
= 5 V, 25°C
(5) When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull-down is relatively strong;
therefore the external driver must be able to supply the pull-down current when attempting to drive the input HIGH. To conserve power, as
the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V
CC
), the strong pull-down reverts to a weak current source.
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相關代理商/技術參數 |
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| CAT24C256HU4IGT3 | 功能描述:電可擦除可編程只讀存儲器 LOW-SATURATION VOLTAGE RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT24C256LGI | 制造商:Catalyst Semiconductor 功能描述: |
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| CAT24C256WE-GT3 | 制造商:ON Semiconductor 功能描述:256-KB I2C SERIAL CMOS EEPROM MEMORY SOIC-8 PKG, 3K/REEL - Tape and Reel |
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