參數(shù)資料
型號(hào)： CA3096
廠商： Intersil Corporation
英文描述： NPN/PNP Transistor Arrays
中文描述： npn型/ PNP晶體管陣列
文件頁(yè)數(shù)： 2/14頁(yè)
文件大小： 133K
代理商： CA3096
2
Absolute Maximum Ratings
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .-55
o
C to 125
o
C
NPN
PNP
Collector-to-Emitter Voltage, V
CEO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 35V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
Collector-to-Base Voltage, V
CBO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 45V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector-to-Substrate Voltage, V
CIO
(Note 1)
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . 45V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter-to-Substrate Voltage, V
EIO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . . -
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -
Emitter-to-Base Voltage, V
EBO
CA3096, CA3096A . . . . . . . . . . . . . . . . . . . . . . 6V
CA3096C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
(All Types) . . . . . . . . . . . . 50mA
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-40V
-24V
-40V
-24V
-
-
-40V
-24V
-40V
-24V
-10mA
Thermal Information
Thermal Resistance (Typical, Note 2)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation (Each Transistor, Note 3) . . . . . 200mW
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150
o
C
Maximum Storage Temperature Range . . . . . . . . . .-65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
θ
JA
(
o
C/W)
90
125
NOTES:
1. The collector of each transistor of the CA3096 is isolated from the substrate by an integral diode. The substrate (Terminal 16) must be
connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor
action.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal
resistances to calculate the junction temperature.
Electrical Specifications
For Equipment Design, At T
A
= 25
o
C
PARAMETER
TEST
CONDITIONS
CA3096
CA3096A
CA3096C
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
DC CHARACTERISTICS FOR EACH NPN TRANSISTOR
I
CBO
V
CB
= 10V,
I
E
= 0
-
0.001
100
-
0.001
40
-
0.001
100
nA
I
CEO
V
CE
= 10V,
I
B
= 0
-
0.006
1000
-
0.006
100
-
0.006
1000
nA
V
(BR)CEO
I
C
= 1mA, I
B
= 0
I
C
= 10
μ
A,
I
E
= 0
I
CI
= 10
μ
A,
I
B
= I
E
= 0
I
E
= 10
μ
A,
I
C
= 0
I
Z
= 10
μ
A
35
50
-
35
50
-
24
35
-
V
V
(BR)CBO
45
100
-
45
100
-
30
80
-
V
V
(BR)CIO
45
100
-
45
100
-
30
80
-
V
V
(BR)EBO
6
8
-
6
8
-
6
8
-
V
V
Z
6
7.9
9.8
6
7.9
9.8
6
7.9
9.8
V
V
CE SAT
l
C
= 10mA,
I
B
= 1mA
-
0.24
0.7
-
0.24
0.5
-
0.24
0.7
V
V
BE
(Note 4)
I
C
= 1mA,
V
CE
= 5V
0.6
0.69
0.78
0.6
0.69
0.78
0.6
0.69
0.78
V
h
FE
(Note 4)
|
V
BE
/
T| (Note 4)
150
390
500
150
390
500
100
390
670
I
C
= 1mA,
V
CE
= 5V
-
1.9
-
-
1.9
-
-
1.9
-
mV/
o
C
DC CHARACTERISTICS FOR EACH PNP TRANSISTOR
I
CBO
V
CB
= -10V,
I
E
= 0
-
-0.06
-100
-
-0.006
-40
-
-0.06
-100
nA
CA3096, CA3096A, CA3096C
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