參數(shù)資料
型號(hào)： CA3086M96
廠商： HARRIS SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： General Purpose NPN Transistor Array
中文描述： 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB
封裝： MS-012AB, 14 PIN
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 153K
代理商： CA3086M96
2
CA3086
Absolute Maximum Ratings
Thermal Information
The following ratings apply for each transistor in the device:
Collector-to-Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . .15V
Collector-to-Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . .20V
Collector-to-Substrate Voltage, V
CIO
(Note 1). . . . . . . . . . . . .20V
Emitter-to-Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . .5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Thermal Resistance (Typical, Note 2)
PDIP Package . . . . . . . . . . . . . . . . . . .
SOIC Package . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation (Any one transistor). . . . . . . . .300mW
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
θ
JA
(
o
C/W)
110
130
θ
JC
(
o
C/W)
N/A
N/A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. To avoid
undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC) ground. A suitable
bypass capacitor can be used to establish a signal ground.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
T
A
= 25
o
C, For Equipment Design
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-to-Base Breakdown Voltage
V
(BR)CBO
l
C
= 10
μ
A, I
E
= 0
20
60
-
V
Collector-to-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
15
24
-
V
Collector-to-Substrate Breakdown Voltage
V
(BR)ClO
I
C
= 10
μ
A, I
CI
= 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
5
7
-
V
Collector-Cutoff Current (Figure
1)
I
CBO
V
CB
= 10V, I
E
= 0,
-
0.002
100
nA
Collector-Cutoff Current (Figure
2)
I
CEO
V
CE
= 10V, I
B
= 0,
-
(Figure 2)
5
μ
A
DC Forward-Current Transfer Ratio (Figure 3)
h
FE
V
CE
= 3V, I
C
= 1mA
40
100
-
Electrical Specifications
T
A
= 25
o
C, Typical Values Intended Only for Design Guidance
PARAMETER
SYMBOL
TEST CONDITIONS
TYPICAL
VALUES
UNITS
DC Forward-Current Transfer Ratio
(Figure 3)
h
FE
V
CE
= 3V
I
C
= 10mA
100
I
C
= 10
μ
A
54
Base-to-Emitter Voltage (Figure 4)
V
BE
V
CE
= 3V
I
E
= 1 mA
0.715
V
I
E
= 10mA
0.800
V
V
BE
Temperature Coefficient (Figure 5)
V
BE
/
T
V
CE
= 3V, l
C
= 1 mA
-1.9
mV/
o
C
Collector-to-Emitter
Saturation Voltage
V
CE SAT
I
B
= 1mA, I
C
= 10mA
0.23
V
Noise Figure (Low Frequency)
NF
f = 1kHz, V
CE
= 3V, I
C
= 100
μ
A,
R
S
= 1k
3.25
dB
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