- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379725 > CA3086F (HARRIS SEMICONDUCTOR) General Purpose NPN Transistor Array PDF資料下載
參數(shù)資料
| 型號： | CA3086F |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose NPN Transistor Array |
| 中文描述： | 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MO-001AB |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 153K |
| 代理商： | CA3086F |
2
CA3086
Absolute Maximum Ratings
Thermal Information
The following ratings apply for each transistor in the device:
Collector-to-Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . .15V
Collector-to-Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . .20V
Collector-to-Substrate Voltage, V
CIO
(Note 1). . . . . . . . . . . . .20V
Emitter-to-Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . .5V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Thermal Resistance (Typical, Note 2)
PDIP Package . . . . . . . . . . . . . . . . . . .
SOIC Package . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation (Any one transistor). . . . . . . . .300mW
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
θ
JA
(
o
C/W)
110
130
θ
JC
(
o
C/W)
N/A
N/A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. To avoid
undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC) ground. A suitable
bypass capacitor can be used to establish a signal ground.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
T
A
= 25
o
C, For Equipment Design
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-to-Base Breakdown Voltage
V
(BR)CBO
l
C
= 10
μ
A, I
E
= 0
20
60
-
V
Collector-to-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
15
24
-
V
Collector-to-Substrate Breakdown Voltage
V
(BR)ClO
I
C
= 10
μ
A, I
CI
= 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
5
7
-
V
Collector-Cutoff Current (Figure
1)
I
CBO
V
CB
= 10V, I
E
= 0,
-
0.002
100
nA
Collector-Cutoff Current (Figure
2)
I
CEO
V
CE
= 10V, I
B
= 0,
-
(Figure 2)
5
μ
A
DC Forward-Current Transfer Ratio (Figure 3)
h
FE
V
CE
= 3V, I
C
= 1mA
40
100
-
Electrical Specifications
T
A
= 25
o
C, Typical Values Intended Only for Design Guidance
PARAMETER
SYMBOL
TEST CONDITIONS
TYPICAL
VALUES
UNITS
DC Forward-Current Transfer Ratio
(Figure 3)
h
FE
V
CE
= 3V
I
C
= 10mA
100
I
C
= 10
μ
A
54
Base-to-Emitter Voltage (Figure 4)
V
BE
V
CE
= 3V
I
E
= 1 mA
0.715
V
I
E
= 10mA
0.800
V
V
BE
Temperature Coefficient (Figure 5)
V
BE
/
T
V
CE
= 3V, l
C
= 1 mA
-1.9
mV/
o
C
Collector-to-Emitter
Saturation Voltage
V
CE SAT
I
B
= 1mA, I
C
= 10mA
0.23
V
Noise Figure (Low Frequency)
NF
f = 1kHz, V
CE
= 3V, I
C
= 100
μ
A,
R
S
= 1k
3.25
dB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CA3086M | General Purpose NPN Transistor Array |
| CA3086M96 | General Purpose NPN Transistor Array |
| CA3088E | AM Receiver Subsystem and General-Purpose Amplifier Array |
| CA3089E | FM IF System |
| CA3089M1 | FM IF System |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CA3086M | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:General Purpose NPN Transistor Array |
| CA3086M96 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:General Purpose NPN Transistor Array |
| CA3088E | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:AM Receiver Subsystem and General-Purpose Amplifier Array |
| CA3089 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:OBSOLETE PRODUCT NO RECOMMENDED REPLACEMENT |
| CA3089_02 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:FM IF System |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。