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參數(shù)資料
| 型號： | CA3081F |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose High Current NPN Transistor Arrays |
| 中文描述： | 100 mA, 16 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-001AC |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 66K |
| 代理商： | CA3081F |
2
T
A
= 25
o
C
Collector-to-Emitter Voltage (V
CEO
) . . . . . . . . . . . . . . . . . . . . . .16V
Collector-to-Base Voltage (V
CBO
) . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage (V
CIO
, Note 1). . . . . . . . . . . . . . 20V
Emitter-to-Base Voltage (V
EBO
) . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (I
C
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Base Current (I
B
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Thermal Information
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Thermal Resistance (Typical, Note 2)
CERDIP Package. . . . . . . . . . . . . . . . .
PDIP Package . . . . . . . . . . . . . . . . . . .
SOIC Package . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation (Any One Transistor) . . . . . . . 500mW
Maximum Junction Temperature (Ceramic Package) . . . . . . . . .175
o
C
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
θ
JA
(
o
C/W)
115
100
190
θ
JC
(
o
C/W)
45
N/A
N/A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3081 and CA3082 is isolated from the substrate by an integral diode. The substrate must be connected
to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor
action. To avoid undesired coupling between transistors, the substrate terminal (5) should be maintained at either DC or signal (AC) ground. A
suitable bypass capacitor can be used to establish a signal ground.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
For Equipment Design at T
A
= 25
o
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-to-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CIO
V
(BR)CEO
V
(BR)EBO
h
FE
I
C
= 500
μ
A, I
E
= 0
I
C
= 500
μ
A, I
B
= 0
I
C
= 1mA, I
B
= 0
I
C
= 500
μ
A
V
CE
= 0.5V, I
C
= 30mA
V
CE
= 0.8V, I
C
= 50mA
I
C
= 30mA, I
B
= 1mA
20
60
-
V
Collector-to-Substrate Breakdown Voltage
20
60
-
V
Collector-to-Emitter Breakdown Voltage
16
24
-
V
Emitter-to-Base Breakdown Voltage
5.0
6.9
-
V
DC Forward Current Transfer Ratio
30
68
-
-
40
70
-
-
Base-to-Emitter Saturation Voltage (Figure 4)
V
BESAT
V
CESAT
-
0.87
1.2
V
Collector-to-Emitter Saturation Voltage
CA3081, CA3082
I
C
= 30mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 10V, I
B
= 0
V
CB
= 10V, I
E
= 0
-
0.27
0.5
V
CA3081 (Figure 5)
-
0.4
0.7
V
CA3082 (Figure 5)
-
0.4
0.8
V
Collector Cutoff Current
I
CEO
I
CBO
-
-
10
μ
A
Collector Cutoff Current
-
-
1.0
μ
A
Typical Read - Out Driver Applications
FIGURE 1. SCHEMATIC DIAGRAM SHOWING ONE
TRANSISTOR OF THE CA3081 DRIVING ONE
SEGMENT OF AN INCANDESCENT DISPLAY
FIGURE 2. SCHEMATIC DIAGRAM SHOWING ONE
TRANSISTOR OF THE CA3082 DRIVING A LIGHT
EMITTING DIODE (LED)
FROM
DECODER
1/7 CA3081
(COMMON EMITTER)
V+
1 SEGMENT OF INCANDESCENT DISPLAY
(DR2000 SERIES OR EQUIVALENT)
1/7 CA3082
(COMMON COLLECTOR)
V+
R (NOTE)
LIGHT EMITTING DIODE (LED)
40736R
NOTE:
The Resistance for R is determined by the relationship:
Where: V
P
= Input Pulse Voltage
V
F
= Forward Voltage Drop Across the Diode
R
V
------------------------------------------------------
V
V
LED
V
BE
(
)
–
–
=
R
0 for V
P
V
F
LED
(
)
+
=
=
V
P
0V
CA3081, CA3082
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CA3081M | General Purpose High Current NPN Transistor Arrays |
| CA3082 | General Purpose High Current NPN Transistor Arrays |
| CA3082M | General Purpose High Current NPN Transistor Arrays |
| CA3082M96 | General Purpose High Current NPN Transistor Arrays |
| CA3083MZ | General Purpose High Current NPN Transistor Array |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CA3081F/3 | 制造商:Intersil Corporation 功能描述: |
| CA3081M | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:General Purpose High Current NPN Transistor Arrays |
| CA3082 | 制造商:Rochester Electronics LLC 功能描述: |
| CA3082 WAF | 制造商:Intersil Corporation 功能描述: |
| CA3082F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Interface IC |
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