參數(shù)資料
型號(hào)： CA3054MZ
廠(chǎng)商： INTERSIL CORP
元件分類(lèi)： 運(yùn)動(dòng)控制電子
英文描述： Dual Independent Differential Amp for Low Power Applications from DC to 120MHz
中文描述： DUAL OP-AMP, 5000 uV OFFSET-MAX, PDSO14
封裝： LEAD FREE, SOIC-14
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 212K
代理商： CA3054MZ
3
FOR EACH TRANSISTOR
DC Forward Base-to-Emitter Voltage
(Figure 8)
V
BE
V
CB
= 3V
I
C
= 50
μ
A
I
C
= 1mA
I
C
= 3mA
I
C
= 10mA
-
0.630
0.700
V
-
0.715
0.800
V
-
0.750
0.850
V
-
0.800
0.900
V
Temperature Coefficient of Base-to-Emitter
Voltage (Figure 6)
V
CB
= 3V, I
C
= 1mA
-
-1.9
-
μ
V/°C
Collector Cutoff Current (Figure 4)
I
CBO
V
CB
= 10V, I
E
= 0
-
0.002
100
nA
Collector-to-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
15
24
-
V
Collector-to-Base Breakdown Voltage
V
(BR)CBO
I
C
= 10
μ
A, I
E
= 0
20
60
-
V
Collector-to-Substrate Breakdown
Voltage
V
(BR)CIO
I
C
= 10
μ
A, I
CI
= 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
5
7
-
V
DYNAMIC CHARACTERISTICS
Common Mode Rejection Ratio for each
Amplifier (Figures 1, 10)
CMRR
V
CC
= 12V, V
EE
= -6V,
V
X
= -3.3V, f = 1kHz
-
100
-
dB
AGC Range, One Stage (Figures 2, 11)
AGC
V
CC
= 12V, V
EE
= -6V,
V
X
= -3.3V, f = 1kHz
-
75
-
dB
Voltage Gain, Single Stage Double-Ended
Output (Figures 2, 11)
A
V
CC
= 12V, V
EE
= -6V,
V
X
= -3.3V, f = 1kHz
-
32
-
dB
AGC Range, Two Stage (Figures 3, 12)
AGC
V
CC
= 12V, V
EE
= -6V,
V
X
= -3.3V, f = 1kHz
-
105
-
dB
Voltage Gain, Two Stage Double-Ended Output
(Figures 3, 12)
A
V
CC
= 12V, V
EE
= -6V,
V
X
= -3.3V, f = 1kHz
-
60
-
dB
Low Frequency, Small Signal Equivalent Circuit Char-
acteristics (For Single Transistor)
Forward Current Transfer Ratio (Figure 13)
h
FE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
110
-
-
Short Circuit Input Impedance (Figure 13)
h
IE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
3.5
-
k
Open Circuit Output Impedance
(Figure 13)
h
OE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
15.6
-
μ
S
Open Circuit Reverse Voltage Transfer
Ratio (Figure 13)
h
RE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
1.8 x
10
-4
-
-
1/f Noise Figure for Single Transistor
NF
f = 1kHz, V
CE
= 3V
-
3.25
-
dB
Gain Bandwidth Product for Single
Transistor (Figure 14)
f
T
V
CE
= 3V, I
C
= 3mA
-
550
-
MHz
Admittance Characteristics; Differential
Circuit Configuration (For Each Amplifier)
Forward Transfer Admittance (Figure 15)
Y
21
V
CB
= 3V, f = 1MHz
Each Collector I
C
≈
1.25mA
-
-20 + j0
-
mS
Input Admittance (Figure 16)
Y
11
V
CB
= 3V, f = 1MHz
Each Collector I
C
≈
1.25mA
-
0.22 +
j0.1
-
mS
Output Admittance (Figure 17)
Y
22
V
CB
= 3V, f = 1MHz
Each Collector I
C
≈
1.25mA
-
0.01 +
j0
-
mS
Reverse Transfer Admittance (Figure 18)
Y
12
V
CB
= 3V, f = 1MHz
Each Collector I
C
≈
1.25mA
-
-0.003
+ j0
-
mS
Electrical Specifications
T
A
= 25°C
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
---------------
CA3054
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