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參數(shù)資料
| 型號(hào)： | CA3046M |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | General Purpose NPN Transistor Arrays |
| 中文描述： | 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012-AB |
| 封裝： | MS-012AB, 14 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | CA3046M |
2
Absolute Maximum Ratings
Thermal Information
Collector-to-Emitter Voltage (V
CEO
) . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage (V
CBO
) . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage (V
CIO
, Note 1). . . . . . . . . . . . . . 20V
Emitter-to-Base Voltage (V
EBO
) . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (I
C
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Thermal Resistance (Typical, Note 2)
PDIP Package . . . . . . . . . . . . . . . . . . .
CERDIP Package. . . . . . . . . . . . . . . . .
SOIC Package . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Hermetic Packages). . . . . . . .175
o
C
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range. . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
θ
JA
(
o
C/W)
180
150
220
θ
JC
(
o
C/W)
N/A
75
N/A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac-
tion.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
T
A
= 25
o
C, characteristics apply for each transistor in CA3045 and CA3046 as specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
Collector-to-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)CIO
V
(BR)EBO
I
CBO
I
CEO
h
FE
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C
= 10
μ
A, I
CI
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 3V
20
60
-
V
Collector-to-Emitter Breakdown Voltage
15
24
-
V
Collector-to-Substrate Breakdown Voltage
20
60
-
V
Emitter-to-Base Breakdown Voltage
5
7
-
V
Collector Cutoff Current (Figure 1)
-
0.002
40
nA
Collector Cutoff Current (Figure 2)
-
See Fig. 2
0.5
μ
A
Forward Current Transfer Ratio (Static Beta)
(Note 3) (Figure 3)
I
C
= 10mA
I
C
= 1mA
I
C
= 10
μ
A
-
100
-
-
40
100
-
-
-
54
-
-
InputOffsetCurrentforMatchedPairQ
1
andQ
2
.
|I
IO1
- I
IO2
| (Note 3) (Figure 4)
Base-to-Emitter Voltage (Note 3) (Figure 5)
V
CE
= 3V, I
C
= 1mA
-
0.3
2
μ
A
V
BE
V
CE
= 3V
I
E
= 1mA
I
E
= 10mA
-
0.715
-
V
-
0.800
-
V
MagnitudeofInputOffetVoltageforDifferentialPair
|V
BE1
- V
BE2
| (Note 3) (Figures 5, 7)
Magnitude of Input Offset Voltage for Isolated
Transistors |V
BE3
- V
BE4
|, |V
BE4
- V
BE5
|,
|V
BE5
- V
BE3
| (Note 3) (Figures 5, 7)
Temperature Coefficient of Base-to-Emitter
Voltage (Figure 6)
V
CE
= 3V, I
C
= 1mA
-
0.45
5
mV
V
CE
= 3V, I
C
= 1mA
-
0.45
5
mV
V
CE
= 3V, I
C
= 1mA
-
-1.9
-
mV/
o
C
Collector-to-Emitter Saturation Voltage
V
CES
I
B
= 1mA, I
C
= 10mA
V
CE
= 3V, I
C
= 1mA
-
0.23
-
V
Temperature Coefficient: Magnitude of Input Off-
set Voltage (Figure 7)
-
1.1
-
μ
V/
o
C
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure (Figure 9)
NF
f = 1kHz, V
CE
= 3V, I
C
= 100
μ
A,
Source Resistance = 1k
-
3.25
-
dB
Low Frequency, Small Signal Equivalent
Circuit Characteristics
Forward Current Transfer Ratio (Figure 11)
h
FE
h
IE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
110
-
-
Short Circuit Input Impedance (Figure 11)
-
3.5
-
k
V
--------------
V
----------------
CA3045, CA3046
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CA3046M96 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:General Purpose NPN Transistor Array |
| CA3049 | 制造商:RCA 功能描述:Transistor |
| CA3049T | 制造商:RCA 功能描述:IC, OP-AMP,SINGLE,BIPOLAR,CAN,8PIN,METAL 制造商:Rochester Electronics LLC 功能描述: |
| CA3049T DIE | 制造商:Harris Corporation 功能描述: |
| CA3049T/3 | 制造商:Harris Corporation 功能描述: |
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