參數(shù)資料
型號(hào)： CA3045F
廠商： HARRIS SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： General Purpose NPN Transistor Arrays
中文描述： 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MO-001AB
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 53K
代理商： CA3045F
3
Open Circuit Output Impedance (Figure 11)
h
OE
h
RE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
15.6
-
μ
S
Open Circuit Reverse Voltage Transfer Ratio
(Figure 11)
-
1.8 x 10
-4
-
-
Admittance Characteristics
Forward Transfer Admittance (Figure 12)
Y
FE
Y
IE
Y
OE
Y
RE
f
T
C
EB
C
CB
C
CI
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
V
CE
= 3V, I
C
= 3mA
V
EB
= 3V, I
E
= 0
V
CB
= 3V, I
C
= 0
V
CS
= 3V, I
C
= 0
-
31 - j1.5
-
-
Input Admittance (Figure 13)
-
0.3 + j0.04
-
-
Output Admittance (Figure 14)
-
0.001 + j0.03
-
-
Reverse Transfer Admittance (Figure 15)
-
See Fig. 14
-
-
Gain Bandwidth Product (Figure 16)
300
550
-
MHz
Emitter-to-Base Capacitance
-
0.6
-
pF
Collector-to-Base Capacitance
-
0.58
-
pF
Collector-to-Substrate Capacitance
-
2.8
-
pF
NOTE:
3. Actual forcing current is via the emitter for this test.
Electrical Specifications
T
A
= 25
o
C, characteristics apply for each transistor in CA3045 and CA3046 as specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE1. TYPICALCOLLECTOR-TO-BASECUTOFFCURRENT
vs TEMPERATURE FOR EACH TRANSISTOR
FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF
CURRENT vs TEMPERATURE FOR EACH
TRANSISTOR
FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER
RATIO AND BETA RATIO FOR Q
1
AND Q
2
vs
EMITTER CURRENT
FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR
MATCHED TRANSISTOR PAIR Q
1
Q
2
vs
COLLECTOR CURRENT
10
2
10
-1
10
1
10
-2
10
-3
10
-4
C
0
25
50
75
100
125
TEMPERATURE (
o
C)
V
CB
= 15V
V
CB
= 10V
V
CB
= 5V
I
E
= 0
10
2
10
-1
10
1
10
-2
10
-3
C
0
25
50
75
100
125
TEMPERATURE (
o
C)
I
B
= 0
V
CE
= 10V
V
CE
= 5V
10
3
EMITTER CURRENT (mA)
V
CE
= 3V
T
A
= 25
o
C
S
T
F
)
B
120
110
100
90
80
70
60
50
0.01
0.1
1.0
10
0.8
0.9
1.0
1.1
h
FE
-------------
OR
-------------
10
1.0
0.1
0.01
I
μ
A
0.01
0.1
1.0
10
COLLECTOR CURRENT (mA)
V
CE
= 3V
T
A
= 25
o
C
CA3045, CA3046
相關(guān)PDF資料
PDF描述
CA3046 General Purpose NPN Transistor Arrays
CA3046M General Purpose NPN Transistor Arrays
CA3046M96 General Purpose NPN Transistor Arrays
CA3054MZ96 Dual Independent Differential Amp for Low Power Applications from DC to 120MHz
CA3054MZ Dual Independent Differential Amp for Low Power Applications from DC to 120MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CA3045F/883 制造商:Raytheon 功能描述:
CA3045F/883B 制造商: 功能描述: 制造商:Raytheon 功能描述: 制造商:undefined 功能描述:
CA3045F3159 制造商:Rochester Electronics LLC 功能描述:- Bulk
CA3045F98 制造商:Rochester Electronics LLC 功能描述:- Bulk
CA3045FX 制造商:Rochester Electronics LLC 功能描述:NPN TRANSISTOR ARRAY BURN-IN 14 CDIP COM - Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*