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參數資料
| 型號： | CA3045 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose NPN Transistor Arrays |
| 中文描述： | 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 3/6頁 |
| 文件大小： | 53K |
| 代理商： | CA3045 |
3
Open Circuit Output Impedance (Figure 11)
h
OE
h
RE
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
-
15.6
-
μ
S
Open Circuit Reverse Voltage Transfer Ratio
(Figure 11)
-
1.8 x 10
-4
-
-
Admittance Characteristics
Forward Transfer Admittance (Figure 12)
Y
FE
Y
IE
Y
OE
Y
RE
f
T
C
EB
C
CB
C
CI
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
f = 1kHz, V
CE
= 3V, I
C
= 1mA
V
CE
= 3V, I
C
= 3mA
V
EB
= 3V, I
E
= 0
V
CB
= 3V, I
C
= 0
V
CS
= 3V, I
C
= 0
-
31 - j1.5
-
-
Input Admittance (Figure 13)
-
0.3 + j0.04
-
-
Output Admittance (Figure 14)
-
0.001 + j0.03
-
-
Reverse Transfer Admittance (Figure 15)
-
See Fig. 14
-
-
Gain Bandwidth Product (Figure 16)
300
550
-
MHz
Emitter-to-Base Capacitance
-
0.6
-
pF
Collector-to-Base Capacitance
-
0.58
-
pF
Collector-to-Substrate Capacitance
-
2.8
-
pF
NOTE:
3. Actual forcing current is via the emitter for this test.
Electrical Specifications
T
A
= 25
o
C, characteristics apply for each transistor in CA3045 and CA3046 as specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
FIGURE1. TYPICALCOLLECTOR-TO-BASECUTOFFCURRENT
vs TEMPERATURE FOR EACH TRANSISTOR
FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF
CURRENT vs TEMPERATURE FOR EACH
TRANSISTOR
FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER
RATIO AND BETA RATIO FOR Q
1
AND Q
2
vs
EMITTER CURRENT
FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR
MATCHED TRANSISTOR PAIR Q
1
Q
2
vs
COLLECTOR CURRENT
10
2
10
-1
10
1
10
-2
10
-3
10
-4
C
0
25
50
75
100
125
TEMPERATURE (
o
C)
V
CB
= 15V
V
CB
= 10V
V
CB
= 5V
I
E
= 0
10
2
10
-1
10
1
10
-2
10
-3
C
0
25
50
75
100
125
TEMPERATURE (
o
C)
I
B
= 0
V
CE
= 10V
V
CE
= 5V
10
3
EMITTER CURRENT (mA)
V
CE
= 3V
T
A
= 25
o
C
S
T
F
)
B
120
110
100
90
80
70
60
50
0.01
0.1
1.0
10
0.8
0.9
1.0
1.1
h
FE
-------------
OR
-------------
10
1.0
0.1
0.01
I
μ
A
0.01
0.1
1.0
10
COLLECTOR CURRENT (mA)
V
CE
= 3V
T
A
= 25
o
C
CA3045, CA3046
相關PDF資料 |
PDF描述 |
|---|---|
| CA3045F | General Purpose NPN Transistor Arrays |
| CA3046 | General Purpose NPN Transistor Arrays |
| CA3046M | General Purpose NPN Transistor Arrays |
| CA3046M96 | General Purpose NPN Transistor Arrays |
| CA3054MZ96 | Dual Independent Differential Amp for Low Power Applications from DC to 120MHz |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CA3045 DIE | 制造商:Harris Corporation 功能描述: |
| CA3045 WAF | 制造商:Harris Corporation 功能描述: |
| CA3045F | 制造商:RCA 功能描述: 制造商:Harris Corporation 功能描述:Bipolar Junction Transistor, Array, DIP 制造商:RCA 功能描述:Bipolar Junction Transistor, Array, DIP |
| CA3045F/883 | 制造商:Raytheon 功能描述: |
| CA3045F/883B | 制造商: 功能描述: 制造商:Raytheon 功能描述: 制造商:undefined 功能描述: |
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