參數(shù)資料
型號(hào)： CA3039M96
廠商： HARRIS SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 20mA-Izt 0.05 1uA-Ir 9.1 SOT-363 3K/REEL
中文描述： 0.025 A, 6 ELEMENT, SILICON, SIGNAL DIODE
文件頁數(shù)： 2/4頁
文件大小： 27K
代理商： CA3039M96
7-19
Absolute Maximum Ratings
Thermal Information
Inverse Voltage (PIV) for: D
1
- D
5
. . . . . . . . . . . . . . . . . . . . . . . . 5V
D
6
. . . . . . . . . . . . . . . . . . . . . . .0.5V
Diode-to-Substrate Voltage (V
DI
) for D
1
- D
5
. . . . . . . . . . . .20V, -1V
(Terminal 1, 4, 5, 8 or 12 to Terminal 10)
DC Forward Current (I
F
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25mA
Recurrent Forward Current (I
F
) . . . . . . . . . . . . . . . . . . . . . . .100mA
Forward Surge Current (I
F
(SURGE)
). . . . . . . . . . . . . . . . . . . .100mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
Thermal Resistance (Typical, Note 1)
Metal Can Package . . . . . . . . . . . . . . .
SOIC Package. . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation (Any One Diode) . . . . . . . . . . . 100mW
Maximum Junction Temperature (Metal Can Package) . . . . . . . 175
o
C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150
o
C
Maximum Storage Temperature Range . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
θ
JA
(
o
C/W)
200
220
θ
JC
(
o
C/W)
120
N/A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
T
A
= 25
o
C; Characteristics apply for each diode unit, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC Forward Voltage Drop (Figure 1)
V
F
I
F
= 50
μ
A
-
0.65
0.69
V
I
F
= 1mA
-
0.73
0.78
V
I
F
= 3mA
-
0.76
0.80
V
I
F
= 10mA
-
0.81
0.90
V
DC Reverse Breakdown Voltage
V
(BR)R
I
R
= -10
μ
A
5
7
-
V
DC Reverse Breakdown Voltage Between Any
Diode Unit and Substrate
V
(BR)R
I
R
= -10
μ
A
20
-
-
V
DC Reverse (Leakage) Current (Figure 2)
I
R
V
R
= -4V
-
0.016
100
nA
DC Reverse (Leakage) Current Between Any
Diode Unit and Substrate (Figure 3)
I
R
V
R
= -10V
-
0.022
100
nA
Magnitude of Diode Offset Voltage (Note 2)
(Figure 1)
I
F
= 1mA
-
0.5
5.0
mV
Temperature Coefficient of |V
F1
- V
F2
| (Figure 4)
I
F
= 1mA
-
1.0
-
μ
V/
o
C
Temperature Coefficient of Forward Drop
(Figure 5)
I
F
= 1mA
-
-1.9
-
mV/
o
C
DC Forward Voltage Drop for Anode-to-
Substrate Diode (D
S
)
V
F
I
F
= 1mA
-
0.65
-
V
Reverse Recovery Time
t
RR
I
F
= 10mA, I
R
= -10mA
-
1.0
-
ns
Diode Resistance (Figure 6)
R
D
f = 1kHz, I
F
= 1mA
25
30
45
Diode Capacitance (Figure 7)
C
D
V
R
= -2V, I
F
= 0
-
0.65
-
pF
Diode-to-Substrate Capacitance (Figure 8)
C
DI
V
DI
= 4V, I
F
= 0
-
3.2
-
pF
NOTE:
2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units.
V
F1
V
F2
–
V
----------------------------------
V
–
V
F
T
----------
CA3039
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