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參數(shù)資料
| 型號： | C67078-A3210-A2 |
| 廠商： | SIEMENS AG |
| 英文描述： | SIPMOS Power Transistor (N channel Enhancement mode FREDFET) |
| 中文描述： | SIPMOS功率晶體管（N通道增強(qiáng)模式FREDFET） |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 155K |
| 代理商： | C67078-A3210-A2 |
Semiconductor Group
6
07/96
BUZ 385
Typ. output characteristics
I
D
=
(
V
DS
)
parameter: t
p
= 80 μs
0
4
8
12
16
20
V
V
DS
28
0
2
4
6
8
10
12
14
16
A
20
I
D
VGS [V]
a
a
4.0
b
b
4.5
c
c
5.0
d
d
5.5
e
e
6.0
f
f
6.5
g
g
7.0
h
h
7.5
i
i
8.0
j
j
9.0
k
k 10.0
l
P
tot
= 125W
l 20.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter: V
GS
0
2
4
6
8
10
12
14
16
I
D
A
19
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.6
R
DS (on)
V
GS
[V] =
a
4.0
a
b
b
4.5
c
c
5.0
d
d
5.5
e
e
6.0
f
f
6.5
g
k
g
7.0
h
j
l
h
7.5
i
i
8.0
j
9.0
k
10.0
l
20.0
Typ. transfer characteristics
I
D
= f(V
GS
)
parameter: t
p
= 80 μs
V
DS
≥
2 x
I
D
x R
DS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
2
4
6
8
10
12
14
A
18
I
D
Typ. forward transconductance
g
fs
= f
(I
D
)
parameter: t
p
= 80 μs,
V
DS
≥
2 x I
D
x R
DS(on)max
0
2
6
8
10
12
A
16
I
D
0
1
2
3
4
5
6
7
8
S
10
g
fs
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