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參數(shù)資料
| 型號： | C527UT230-S0002 |
| 廠商： | Cree, Inc. |
| 英文描述： | UltraThin⑩ LEDs |
| 中文描述： | 超?、獍l(fā)光二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 232K |
| 代理商： | C527UT230-S0002 |
Subject to change without notice.
www.cree.com
FEATURES
Small Chip – 230 x 230 x 85 μm
UT LED Performance
5.5 mW min. (455–475 nm) Blue
2.5 mW min. (500-510 nm) Traffic Green
2.5 mW min. (520-535 nm) Green
Low Forward Voltage
2.9–3.0 V Typical at 5 mA
Single Wire Bond Structure
Class 2 ESD Rating
–
–
–
–
APPLICATIONS
Mobile Phone Keypads
Audio Product Display Lighting
Mobile Appliance Keypads
Automotive Applications
UltraThin LEDs
C
xxx
UT230-S0002
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary GSiC
substrate to deliver
superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and
require a low forward voltage. Cree’s UT series chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and
thinner form factors are required.
D
C
xxx
UT230-S0002 Chip Diagram
Top View
Bottom View
GSiC LED Chip
230 x 230 μm
SiC Substrate
h = 85 μm
Backside
Metallization
80 x 80 μm
Gold Bond Pad
105 μm Diameter
Die Cross Section
Cathode (-)
Anode (+)
SiC Substrate
Bottom Surface
150 x 150 μm
Mesa (junction)
176 x 176 μm
InGaN
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