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參數(shù)資料
| 型號： | C470RT230-S0100 |
| 廠商： | Cree, Inc. |
| 英文描述： | RazerThin㈢ LEDs |
| 中文描述： | RazerThin㈢發(fā)光二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 225K |
| 代理商： | C470RT230-S0100 |
Subject to change without notice.
www.cree.com
FEATURES
Small Chip - 200 x 200 x 85 μm
Low Forward Voltage
2.9 V Typical at 5 mA
RT230 LED Performance
2.0 mW min. Blue (455-475 nm)
1.5 mW min. Green (520-535 nm & 500-
510 nm)
Single Wire Bond Structure
Class 2 ESD Rating
–
–
–
APPLICATIONS
Mobile Phone Key Pads
White
Blue
Green
Audio Product Display Lighting
Mobile Appliance Keypads
–
–
–
RazerThin
LEDs
C
xxx
RT230-S000
Cree’s RazerThin LEDs combine highly efficient InGaN materials with Cree’s proprietary GSiC substrate to deliver
superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and
require a low forward voltage. Cree’s RT series chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000V ESD. Applications include keypad backlighting where sub-miniaturization and
thinner form factors are required.
C
xxx
RT230-S000 Chip Diagram
D
Top View
Bottom View
GSiC LED Chip
200 x 200 μm
SiC Substrate
h = 85 μm
Backside
Metallization
80 x 80 μm
Gold Bond Pad
105 μm Diameter
Side View
Cathode (-)
Anode (+)
Mesa (junction)
176 x 176 μm
InGaN
相關PDF資料 |
PDF描述 |
|---|---|
| C470RT230-S0200 | RazerThin㈢ LEDs |
| C470RT290-S0100 | RazerThin㈢ LEDs |
| C470RT290-S0200 | RazerThin㈢ LEDs |
| C470UT200-Sxxxx | Cree㈢ UltraThin⑩ LED |
| C470UT230-S0002 | UltraThin⑩ LEDs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| C470RT230-S0200 | 制造商:CREE 制造商全稱:Cree, Inc 功能描述:RazerThin㈢ LEDs |
| C470RT260-0301 | 制造商:CREE 制造商全稱:Cree, Inc 功能描述:Reduced Forward Voltage 3.2 V Typical at 20 mA |
| C470RT260-0302 | 制造商:CREE 制造商全稱:Cree, Inc 功能描述:Reduced Forward Voltage 3.2 V Typical at 20 mA |
| C470RT260-0303 | 制造商:CREE 制造商全稱:Cree, Inc 功能描述:Reduced Forward Voltage 3.2 V Typical at 20 mA |
| C470RT260-0304 | 制造商:CREE 制造商全稱:Cree, Inc 功能描述:Reduced Forward Voltage 3.2 V Typical at 20 mA |
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