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參數(shù)資料
| 型號： | C43C2 |
| 英文描述： | Three terminal adjustable current sources |
| 中文描述： | 晶體管|晶體管|叩| 30V的五（巴西）總裁| 3A條一（c）|至126 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 26K |
| 代理商： | C43C2 |
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current (Peak)*
Base current
Total power dissipation up to T
A
= 25°C
Total power dissipation up to T
C
= 25°C
Junction temperature
Storage temperature
I
CM
I
B
P
D
P
D
T
j
T
stg
max.
max.
max.
max.
max.
–65 to +150 oC
5 A
2 A
2.1 W
12.5 W
150 oC
THERMAL RESISTANCE
From junction to case
From junction to ambient
R
th j–c
R
th j–a
=
=
10
°C/W
60
°C/W
CHARACTERISTICS
T
c
= 25°C unless otherwise specified
Collector cutoff current
V
BE
= 0; V
CE
= Rated V
CES
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown sus. voltage
I
C
= 100 mA; I
B
= 0
Saturation voltages
I
C
= 1 A; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
D.C. current gain
I
C
= 200 mA; V
CE
= 1 V
I
CES
max.
10 μA
I
EBO
max.
100 μA
V
CEO(sus)
*
min.
30 V
V
CEsat
*
V
BEsat
*
max.
max.
0.5 V
1.3 V
h
FE
*
min.
max.
40
120
I
C
= 1 A; V
CE
= 1 V
Transition frequency
I
C
= 20 mA; V
CE
= 4 V
Collector capacitance
V
CB
= 10 V; I
E
= 0; f = 1 MHz
h
FE
*
min.
20
f
typ.
40 MHz
C
cbo
max.
125 pF
Switching time
Delay time + Rise time
I
C
= 1 A; I
B1
= I
B2
= 0.1 A
t
d
+t
r
typ.
50 ns
Storage time + Fall time
V
CC
= 30 V; t
p
= 25 μsec
t
s
t
f
typ.
typ.
500 ns
50 ns
*Pulsed test: P
W
= 300 ms; duty cycle = 2%.
C43C2
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