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參數(shù)資料
| 型號： | C40C |
| 英文描述： | Inertial sensor: 2axis - 2g/6g linear accelerometer |
| 中文描述： | 混合信號CMOS工藝和專門模擬 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 72K |
| 代理商： | C40C |
4
μ
m - 10 volts
4
μ
m - 15 volts
min. typ. max. min. typ. max.
NPN
vertical
Gain
*
580
240
Bvceo (V)
70
90
70
90
PNP
vertical
Gain
*
-
-
-
50
120
200
Bvceo (V)
-
-
-
20
30
*
Test condition : Vce = 5 volts
4
μ
m - 10 volts
4
μ
m - 15 volts
min. typ. max.
min. typ. max.
Pwell
5200
3300
Pfield in Pwell
1000
2000
3000
1000
2000
3000
N+
6
9
14
30
39
50
P+
70
94
110
75
90
125
Poly gate
14
21
26
16
20
28
Poly capacitor
30
43
80
20
28
50
Metal I
0.038
0.038
Metal II
0.038
0.038
Capacitances (fF/
μ
m
2
)
Resistances (
/sq.)
I
Vds (volts)
Vgs = -3V
Vgs = -18V
Vgs = -15V
Vgs = -12V
Vgs = -9V
Vgs = -6V
Vgs = 18V
Vgs = 15V
Vgs = 12V
Vgs = 9V
Vgs = 6V
Vgs = 3V
Vds (volts)
I
Vds = 18V
Vds = 16V
Vds = 14V
Vgs (volts)
I
μ
A
μ
m
FIG 3: Substrate Current per Gate Width for a 50x4
μ
m
N-MOSFET (4
μ
m High Voltage Process)
FIG 4 : Vertical PNP bipolar transistor
Vce (volts)
I
-40
0
0
-2.5
-20
-0.5
-1.0
-1.5
-2.0
Ib = -1
m
A
Ib = -10
m
A
Ib = -5
m
A
Note: These values are for guidance only. Many of them can be
adjusted to suit customer requirements. For full process
specifications contact a Dalsa Semiconductor sales office or representative.
Bipolar characteristics
FIG 1: I-V Characteristics for a 50x4
μ
m N-MOSFET
(4
μ
m High Voltage Process)
FIG 2 : I-V Characteristics for a 50x4
μ
m P-MOSFET
(4
μ
m High Voltage Process)
4
μ
m - 10 volts
4
μ
m - 15 volts
min. typ. max.
min. typ. max.
Inter-poly
0.35
0.43
0.55
0.45
0.55
0.65
Gate oxide
0.51
0.54
0.58
0.41
0.43
0.46
N+ Junction
0.33
0.29
P+ Junction
0.14
0.10
4 Micron CMOS Process Family (cont’d)
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| C430C104J1G5CA | MILITARY SPECIFCATIONS ON BACK |
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