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參數(shù)資料
| 型號： | C30D |
| 英文描述： | 4 MBIT (512KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM |
| 中文描述： | 混合信號CMOS工藝和專門模擬 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | C30D |
3μm
10 & 5 & 3volts
Units
Metal I pitch (line/space)
3 / 4
μm
Metal II pitch (line/space)
3 / 4
μm
Poly pitch (line/space)
3 / 3
μm
Contact
3 x 3
μm
Via
3 x 3
μm
Gate geometry
3
μm
P-well junction depth
4
μm
N+ junction depth
0.40
μm
P+ junction depth
0.55
μm
Gate oxide thickness
470
Inter poly oxide thick.
650
Process parameters
3 MICRON - 10 volts
3 MICRON - 5 volts
3 MICRON - 3 volts
Units
Conditions
N Channel
min. typ. max.
P Channel
min. typ. max.
N Channel
min. typ. max.
P Channel
min. typ. max.
N Channel
min. typ. max.
P Channel
min. typ. max.
Vt (50x3μm) 0.6
0.8 1.0
0.6
0.8
1.0
0.6
0.8
1.0
0.6
0.8
1.0
0.35 0.50 0.65 0.35 0.50 0.65
V
saturation region
Ids
(50x3μm)
82
36
22
9
42
17
μ
A/
μ
m
10 V : Vds=Vgs=5v
3&5 V: Vds=Vgs=3v
Body
factor
(50x50μm)
0.5
0.6
0.6
0.4
0.5
0.2
√
v
Bvdss
16
21
16
18
10 16
10
18
10
16
10
14
V
Ids = 1μA
Subthres.
Slope
94
100
120
110
92
92
mV/
dec
5v : Vds=0.1v
3v : Vds=3.6v
Field thresh.
12
20
12
19
12
27
12
19
12
26
12
18
V
Ids = 14μA
L effective
2.9
2.5
2.4
2.2
2.4
2.2
μm
L drawn = 3μm
MOSFET Electrical parameters
Features
LO
V
MOS Process [3Volts (2.7~3.6) Low Voltage Option]
Double Poly / Double Metal
6
μ
m Poly Pitch; 7
μ
m Metal Pitch
7 Volts Maximum Operating Voltage
10 Volts High Voltage Option
ProToDuction
TM
Option for low cost prototypes,
150 mm wafers.
Description
The Dalsa Semiconductor 3
μ
m CMOS double poly / double
metal process family offers three operating voltage options. The
standard process has a maximum operating voltage of 7 volts
while the high voltage option allows 11 volts operation. The
third option is aimed at the 3 volts market. It offers low and
matched threshold voltages for improved dynamic range
needed in mixed analog/digital applications.
3 Micron CMOS Process Family
For More Information:
DALSA Semiconductor Sales
18 Boulevard de l’Aéroport
Bromont, Québec, Canada
J2L 1S7
Tel :
(450) 534-2321 ext. 1448
(800) 718-9701
(450) 534-3201
email: dalsasales@dalsasemi.com
Fax
www.dalsasemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| C3ENPA1-DS | 5.0 or 3.3V, 256Kbit (32Kbit x 8) ZEROPOWER® SRAM |
| C3ENPB0-DS | 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM |
| C3F189AD | 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM |
| C3GD | 5V, 64Kbit (8Kbit x 8) ZEROPOWER® SRAM |
| C5GDS | 4-BIT MAGNITUDE COMPARATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C30DRT | 制造商:SILABS 制造商全稱:SILABS 功能描述:INSULATOR MATERIAL: SEEPART NUMBER CODING |
| C30DRX | 制造商:SILABS 制造商全稱:SILABS 功能描述:BOARD INSERTION FORCE: 16 OZ MAX PER CONTACT PAIR WHEN USING A .062 TEST BLADE |
| C30DRY | 制造商:SILABS 制造商全稱:SILABS 功能描述:PLATING: SEE PART NUMBER CODING OPERTING |
| C30F | 功能描述:保險絲 CANADIAN FUSE UNIT RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485 |
| C30FBS | 功能描述:熔絲座 FUSEHOLDER RoHS:否 制造商:Littelfuse 產(chǎn)品: 電流額定值:30 A 電壓額定值:1000 VDC 極數(shù):1 系列: 安裝風(fēng)格:DIN Rail 端接類型: 軸類型: 工作溫度范圍: |
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