參數(shù)資料
型號(hào): C30618EST-07-FC
英文描述: 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
中文描述: 光電
文件頁數(shù): 3/6頁
文件大?。?/td> 283K
代理商: C30618EST-07-FC
Figure 3: Typical dark current vs. voltage
Figure 4: Typical dark current vs. temperature
at VOP= -5V.
Specifications (at VR= VOPtypical), 22°C
Parameter
C30617
Typ
C30618
Typ
Min
Max
Min
Max
Units
Operating Voltage
Breakdown Voltage
Active Diameter
Responsivity at 1300 nm
Ceramic (D1)/TO-18 (D2)
Fiber (D6)/FC (D4)/ST (D3)/SC (D5)
1
Responsivity at 1550 nm
Ceramic (D1)/TO-18 (D2)
Fiber (D6)/FC (D4)/ST (D3)/SC (D5)
1
Dark Current
Spectral Noise Current (10 kHz, 1.0 Hz)
Capacitance at VR= VOP(typ)
(D1),(D6),(D3),(D5)
TO-18 (D2)
Rise/Fall Time (10% to 90%)
Bandwidth (-3 dB, RL= 50
)
Available Package Types
1
25
5
10
1
25
5
80
350
10
V
V
μm
100
100
0.80
0.65
0.90
0.75
0.80
0.65
0.90
0.75
A/W
0.85
0.70
0.95
0.80
< 1.0
< 0.02
0.85
0.70
0.95
0.80
2.0
0.02
A/W
2.0
0.15
5.0
0.20
nA
pA/
Hz
0.6
0.8
0.07
3.5
0.8
1.0
0.5
4.0
4.0
0.5
0.75
6.0
6.0
1.0
pF
ns
GHz
-
D1, D2, D3, D4, D5, D6,
D1, D2, D3, D4, D21
Maximum Ratings
Maximum Forward Current
Power Dissipation
Storage Temperature
2
Operating Temperature
2
10
100
125
125
10
100
125
125
mA
mW
°C
°C
-60
-40
-60
-40
Note 1. Coupled from 62.5 Fm, 0.28 NAgraded index multi-mode fiber using 1300 nm SLED source.
Note 2. Maximum storage and operating temperature for connectorized and fibered devices is +85°C.
C30618
C30617
C30637
C30616
相關(guān)PDF資料
PDF描述
C30618EST-07-SC 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection
C30618EST-07-ST 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection
C30637BCER-04-FC 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection
C30616BFC-04-SC Ultrafast recovery diode
C30616BFC-04-ST Ultrafast recovery diode
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