參數(shù)資料
型號: C30618EST-04-ST
英文描述: 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
中文描述: 光電
文件頁數(shù): 2/6頁
文件大?。?/td> 283K
代理商: C30618EST-04-ST
Figure 1: Typical spectral responsivity vs wavelength.
Dotted line shows response in D2 package (silicon window)
Figure 2: Typical capacitance vs operating voltage.
Note 1: Ceramic submount.
Performance Specifications (at VR= VOPtypical), 22°C
Parameter
C30616
Typ
C30637
Typ
Min
Max
Min
Max
Units
Operating Voltage
Breakdown Voltage
Active Diameter
Responsivity at 1300 nm
Ceramic (D1)
Responsivity at 1550 nm
Ceramic (D1)
Dark Current
Spectral Noise Current (10 kHz, 1.0 Hz)
Capacitance at V
R
= V
OP
(typ)
Ceramic (D1)
Rise/Fall Time (10% to 90%)
Bandwidth (-3 dB, RL= 50
)
Available Package Types
1
25
5
10
1
25
5
10
V
V
μm
100
50
100
75
0.80
0.90
0.80
0.90
A/W
0.85
0.95
< 1.0
< 0.02
0.85
0.95
< 1.0
< 0.02
A/W
nA
pA/
Hz
2.0
0.15
2.0
0.15
0.35
0.07
3.5
D1
0.55
0.5
0.40
0.07
3.5
D1
0.60
0.5
pF
ns
GHz
Maximum Ratings
Maximum Forward Current
Power Dissipation
Storage Temperature
Operating Temperature
10
100
125
125
10
100
125
125
mA
mW
°C
°C
-60
-40
-60
-40
相關(guān)PDF資料
PDF描述
C30618EST-07-FC 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE&#174; serial access EEPROM
C30618EST-07-SC 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection
C30618EST-07-ST 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection
C30637BCER-04-FC 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection
C30616BFC-04-SC Ultrafast recovery diode
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