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參數(shù)資料
| 型號(hào)： | C30616ESC-04-FC |
| 英文描述： | Ultrafast recovery - 1200 V diode |
| 中文描述： | 光電 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 283K |
| 代理商： | C30616ESC-04-FC |
Figure 1: Typical spectral responsivity vs wavelength.
Dotted line shows response in D2 package (silicon window)
Figure 2: Typical capacitance vs operating voltage.
Note 1: Ceramic submount.
Performance Specifications (at VR= VOPtypical), 22°C
Parameter
C30616
Typ
C30637
Typ
Min
Max
Min
Max
Units
Operating Voltage
Breakdown Voltage
Active Diameter
Responsivity at 1300 nm
Ceramic (D1)
Responsivity at 1550 nm
Ceramic (D1)
Dark Current
Spectral Noise Current (10 kHz, 1.0 Hz)
Capacitance at V
R
= V
OP
(typ)
Ceramic (D1)
Rise/Fall Time (10% to 90%)
Bandwidth (-3 dB, RL= 50
)
Available Package Types
1
25
5
10
1
25
5
10
V
V
μm
100
50
100
75
0.80
0.90
0.80
0.90
A/W
0.85
0.95
< 1.0
< 0.02
0.85
0.95
< 1.0
< 0.02
A/W
nA
pA/
√
Hz
2.0
0.15
2.0
0.15
0.35
0.07
3.5
D1
0.55
0.5
0.40
0.07
3.5
D1
0.60
0.5
pF
ns
GHz
Maximum Ratings
Maximum Forward Current
Power Dissipation
Storage Temperature
Operating Temperature
10
100
125
125
10
100
125
125
mA
mW
°C
°C
-60
-40
-60
-40
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| C30616ESC-04-SC | Ultrafast recovery - high voltage diode |
| C30616ESC-04-ST | Ultrafast recovery - high voltage diode |
| C30616ESC-07-FC | Ultrafast recovery - 1200 V diode |
| C30616ESC-07-SC | Ultrafast recovery - 1200 V diode |
| C30616ESC-07-ST | Ultrafast recovery - 1200 V diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C30616ESC-04-SC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30616ESC-04-ST | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30616ESC-07-FC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30616ESC-07-SC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30616ESC-07-ST | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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