參數資料
型號: C122B1
廠商: MOTOROLA INC
元件分類: 晶閘管
英文描述: SILICON CONTROLLED RECTIFIERS
中文描述: 8 A, 200 V, SCR, TO-220AB
封裝: CASE 221A, 3 PIN
文件頁數: 2/3頁
文件大小: 65K
代理商: C122B1
37
Motorola Thyristor Device Data
MAXIMUM RATINGS —
continued
Rating
Symbol
Value
Unit
Forward Peak Gate Power (t = 10
μ
s)
PGM
PG(AV)
IGM
TJ
Tstg
5
Watts
Forward Average Gate Power
0.5
Watt
Forward Peak Gate Current
2
Amps
Operating Junction Temperature Range
–40 to +100
°
C
Storage Temperature Range
–40 to +125
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.8
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TC = 25
°
C
TC = 100
°
C
IDRM, IRRM
10
0.5
μ
A
mA
Peak On-State Voltage(1)
(ITM = 16 A Peak, TC = 25
°
C)
VTM
1.83
Volts
Gate Trigger Current (Continuous dc)
(VD = 6 V, RL = 91 Ohms, TC = 25
°
C)
(VD = 6 V, RL = 45 Ohms,
TC = –40
°
C)
IGT
25
40
mA
Gate Trigger Voltage (Continuous dc)
(VD = 6 V, RL = 91 Ohms, TC = 25
°
C)
(VD = 6 V, RL = 45 Ohms,
TC = –40
°
C)
(VD = Rated VDRM, RL = 1000 Ohms,
TC = 100
°
C)
Holding Current
(VD = 24 Vdc, IT = 0.5 A, 0.1 to 10 ms Pulse,
Gate Trigger Source = 7 V, 20 Ohms)
VGT
0.2
1.5
2
Volts
TC = 25
°
C
TC = –40
°
C
IH
30
60
mA
Turn-Off Time (VD = Rated VDRM)
(ITM = 8 A, IR = 8 A)
tq
50
μ
s
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Linear, TC = 100
°
C)
dv/dt
50
V/
μ
s
1. Pulse Test: Pulse Width = 1 ms, Duty Cycle
2%.
360
°
240
°
180
°
120
°
RESISTIVE OR
INDUCTIVE LOAD.
50 TO 400 Hz
85
75
65
95
FIGURE 2 – CURRENT DERATING (FULL-WAVE)
100
60
80
90
70
0
1
IT(AV), AVERAGE ON-STATE CURRENT (AMPERES)
8
7
4
5
6
3
2
ONE CYCLE OF SUPPLY FREQUENCY
0
360
COANGLE
COANGLE
60
°
90
°
180
°
FIGURE 1 – CURRENT DERATING (HALF-WAVE)
0
100
1
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPERES)
8
0
CONDUCTION
ANGLE
360
7
4
5
6
60
80
90
70
3
2
DC
CONDUCTION
ANGLE = 30
°
120
°
C
°
T
C
°
T
CONDUCTION
ANGLE = 60
°
相關PDF資料
PDF描述
C122M1 SILICON CONTROLLED RECTIFIERS
C122N1 SILICON CONTROLLED RECTIFIERS
C1410COA 30V N-Channel PowerTrench MOSFET
C1410NCUA713 30V N-Channel PowerTrench MOSFET
C1410NEOA 30V N-Channel PowerTrench MOSFET
相關代理商/技術參數
參數描述
C122B1G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Thyristors
C122C 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:8-A Silicon Controlled Rectifiers
C122D 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:8-A Silicon Controlled Rectifiers
C122D1 制造商:Motorola 功能描述:122 MOT SCR TO:220
C122E 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:8-A Silicon Controlled Rectifiers