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| 型號(hào)： | C106MG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers |
| 中文描述： | 4 A, 600 V, SCR, TO-225AA |
| 封裝： | LEAD FREE, CASE 77-09, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 62K |
| 代理商： | C106MG |
C106 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, R
GK
= 1000 Ohms)
T
J
= 25
°
C
T
J
= 110
°
C
I
DRM
, I
RRM
10
100
A
A
ON CHARACTERISTICS
Peak Forward OnState Voltage (Note 3)
(I
TM
= 4 A)
V
TM
2.2
V
Gate Trigger Current (Continuous dc) (Note 4)
(V
AK
= 6 Vdc, R
L
= 100 Ohms)
T
J
= 25
°
C
T
J
= 40
°
C
I
GT
15
35
200
500
A
Peak Reverse Gate Voltage (I
GR
= 10 A)
V
GRM
6.0
V
Gate Trigger Voltage (Continuous dc) (Note 4)
(V
AK
= 6 Vdc, R
L
= 100 Ohms)
T
J
= 25
°
C
T
J
= 40
°
C
V
GT
0.4
0.5
0.60
0.75
0.8
1.0
V
Gate NonTrigger Voltage (Continuous dc) (Note 4)
(V
AK
= 12 V, R
L
= 100 Ohms, T
J
= 110
°
C)
V
GD
0.2
V
Latching Current
(V
AK
= 12 V, I
G
= 20 mA)
T
J
= 25
°
C
T
J
= 40
°
C
I
L
0.20
0.35
5.0
7.0
mA
Holding Current (V
D
= 12 Vdc)
(Initiating Current = 20 mA, Gate Open)
T
J
= 25
°
C
T
J
= 40
°
C
T
J
= +110
°
C
I
H
0.19
0.33
0.07
3.0
6.0
2.0
mA
DYNAMIC CHARACTERISTICS
Critical RateofRise of OffState Voltage
(V
AK
= Rated V
DRM
, Exponential Waveform, R
GK
= 1000 Ohms,
T
J
= 110
°
C)
3. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
4. R
GK
is not included in measurement.
dv/dt
8.0
V/ s
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
(off state)
I
RRM
at V
RRM
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