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參數(shù)資料
| 型號(hào)： | C106DG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers |
| 中文描述： | 4 A, 400 V, SCR, TO-225AA |
| 封裝： | LEAD FREE, CASE 77-09, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | C106DG |
C106 Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Max
Unit
Peak Repetitive OffState Voltage (Note 1)
(Sine Wave, 5060 Hz, R
GK
= 1 k ,
T
C
= 40
°
to 110
°
C)
C106B
C106D, C106D1*
C106M, C106M1*
V
DRM,
V
RRM
200
400
600
4.0
V
On-State RMS Current
(180
°
Conduction Angles, T
C
= 80
°
C)
Average OnState Current
(180
°
Conduction Angles, T
C
= 80
°
C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= +110
°
C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
1.0 sec, T
C
= 80
°
C)
Forward Average Gate Power
(Pulse Width
1.0 sec, T
C
= 80
°
C)
Forward Peak Gate Current
(Pulse Width
1.0 sec, T
C
= 80
°
C)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 2)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
THERMAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
I
T(RMS)
A
I
T(AV)
2.55
A
I
TSM
20
A
I
2
t
P
GM
1.65
0.5
A
2
s
W
P
G(AV)
0.1
W
I
GM
0.2
A
T
J
T
stg
40 to +110
40 to +150
6.0
°
C
°
C
in. lb.
Characteristic
Symbol
Max
Unit
°
C/W
°
C/W
°
C
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
R
JC
R
JA
T
L
3.0
75
260
ORDERING INFORMATION
Device
Package
Shipping
C106B
TO225AA
500 Units / Box
C106BG
TO225AA
(PbFree)
500 Units / Box
C106D
TO225AA
500 Units / Box
C106DG
TO225AA
(PbFree)
500 Units / Box
C106D1*
TO225AA
500 Units / Box
C106D1G*
TO225AA
(PbFree)
500 Units / Box
C106M
TO225AA
500 Units / Box
C106MG
TO225AA
(PbFree)
500 Units / Box
C106M1*
TO225AA
500 Units / Box
C106M1G*
TO225AA
(PbFree)
500 Units / Box
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| C106M1G | Sensitive Gate Silicon Controlled Rectifiers |
| C106MG | Sensitive Gate Silicon Controlled Rectifiers |
| C106 | 8X100 OHM 2% ISOLATED RES NETWORK DIP-16 |
| C108 | Previous Vectron Model Numbers |
| C10920FR | FRD DUAL DIODE - ANODE COMMON |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C106DG | 制造商:ON Semiconductor 功能描述:SCR THYRISTOR 4A 400V TO-225AA |
| C106E | 制造商:GESS 制造商全稱:GESS 功能描述:4-A Sensitive-Gate Silicon Controlled Rectifiers |
| C106E1 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SCRs |
| C106F | 制造商:Panasonic Industrial Company 功能描述:BOARD |
| C10-6F | 制造商:Thomas & Betts 功能描述:NON-INS FORK TERM, 12-10, #6, METAL 制造商:Thomas & Betts 功能描述:Fork Terminal 10-12AWG 19.56mm 7.87mm Electro-Tin |
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