參數(shù)資料
型號: C106D
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: RS3-S_D(Z) Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 3.3V; Power: 3W; 2:1 and 3:1 Wide Input Voltage Ranges; 1kVDC, 2kVDC & 3kVDC Isolation; UL94V-0 Package Material; Continuous Short Circuit Protection; Low Ripple and Noise; Remote On/Off Control; Efficiency to 83%
中文描述: 4 A, 400 V, SCR, TO-225AA
封裝: CASE 77-09, 3 PIN
文件頁數(shù): 2/6頁
文件大小: 62K
代理商: C106D
C106 Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Max
Unit
Peak Repetitive OffState Voltage (Note 1)
(Sine Wave, 5060 Hz, R
GK
= 1 k ,
T
C
= 40
°
to 110
°
C)
C106B
C106D, C106D1*
C106M, C106M1*
V
DRM,
V
RRM
200
400
600
4.0
V
On-State RMS Current
(180
°
Conduction Angles, T
C
= 80
°
C)
Average OnState Current
(180
°
Conduction Angles, T
C
= 80
°
C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= +110
°
C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
1.0 sec, T
C
= 80
°
C)
Forward Average Gate Power
(Pulse Width
1.0 sec, T
C
= 80
°
C)
Forward Peak Gate Current
(Pulse Width
1.0 sec, T
C
= 80
°
C)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 2)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
THERMAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
I
T(RMS)
A
I
T(AV)
2.55
A
I
TSM
20
A
I
2
t
P
GM
1.65
0.5
A
2
s
W
P
G(AV)
0.1
W
I
GM
0.2
A
T
J
T
stg
40 to +110
40 to +150
6.0
°
C
°
C
in. lb.
Characteristic
Symbol
Max
Unit
°
C/W
°
C/W
°
C
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
R
JC
R
JA
T
L
3.0
75
260
ORDERING INFORMATION
Device
Package
Shipping
C106B
TO225AA
500 Units / Box
C106BG
TO225AA
(PbFree)
500 Units / Box
C106D
TO225AA
500 Units / Box
C106DG
TO225AA
(PbFree)
500 Units / Box
C106D1*
TO225AA
500 Units / Box
C106D1G*
TO225AA
(PbFree)
500 Units / Box
C106M
TO225AA
500 Units / Box
C106MG
TO225AA
(PbFree)
500 Units / Box
C106M1*
TO225AA
500 Units / Box
C106M1G*
TO225AA
(PbFree)
500 Units / Box
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix.
相關PDF資料
PDF描述
C106M Sensitive Gate Silicon Controlled Rectifiers
C106M1 Sensitive Gate Silicon Controlled Rectifiers
C106BG Sensitive Gate Silicon Controlled Rectifiers
C106D1G Sensitive Gate Silicon Controlled Rectifiers
C106DG Sensitive Gate Silicon Controlled Rectifiers
相關代理商/技術參數(shù)
參數(shù)描述
C106D04 WAF 制造商:Zarlink Semiconductor Inc 功能描述:
C106D1 功能描述:SCR 400V 4A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
C106D1G 功能描述:SCR 400V 4A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
C106D2 制造商:General Electric Company 功能描述:
C106DG 功能描述:SCR 400V 4A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube