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參數(shù)資料
| 型號： | C106 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers |
| 中文描述： | 敏感柵可控硅整流器 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 62K |
| 代理商： | C106 |
C106 Series
http://onsemi.com
4
DC
DC
JUNCTION TEMPERATURE
≈
110
°
C
100
10
20
30
40
70
110
90
3.6
80
0
.4
.8
1.6
1.2
2.0
2.4
3.2
60
4.0
I
T(AV)
AVERAGE ON-STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
50
6
4
2
0
8
0
10
2.8
3.6
.4
.8
1.6
1.2
2.0
2.4
3.2
4.0
2.6
I
T(AV)
AVERAGE ON-STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
C
°
T
P
(
Figure 1. Average Current Derating
Figure 2. Maximum OnState Power Dissipation
1
100
95
40
25
10
20
5
35
50
80
10
110
T
J
, JUNCTION TEMPERATURE (
°
C)
65
G
I
Figure 3. Typical Gate Trigger Current versus
Junction Temperature
Figure 4. Typical Holding Current versus
Junction Temperature
0.9
0.2
0.3
0.4
0.7
1.0
0.8
95
45
25
10
20
5
35
50
80
0.6
110
T
J
, JUNCTION TEMPERATURE (
°
C)
0.5
65
G
V
Figure 5. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
,
10
1000
95
40
25
10
20
5
35
50
80
100
110
T
J
, JUNCTION TEMPERATURE (
°
C)
65
H
I
10
1000
95
40
25
10
20
5
35
50
80
100
110
T
J
, JUNCTION TEMPERATURE (
°
C)
65
L
,
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相關(guān)代理商/技術(shù)參數(shù) |
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