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參數(shù)資料
| 型號(hào)： | C10150 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | CCD multichannel detector head Designed for back-thinned CCD area image sensor |
| 中文描述： | 防治荒漠化多通道探測(cè)器負(fù)責(zé)人回設(shè)計(jì)細(xì)化防治荒漠化領(lǐng)域的圖像傳感器 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 213K |
| 代理商： | C10150 |
CCD multichannel detector head
C10150, C10151
I
Absolute maximum ratings
Parameter
Supply voltage (for digital circuitry)
Symbol
V
D1
V
A1+
V
A1-
V
A2
V
D2
Vp
V
F
-
Min.
-0.5
-
-
-
-
-
-
-
0
+10
-20
0
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
+7
+18
-18
+30
+7
+7
+14
V
D1
+50
+35 *
3
+70
+50
Unit
Supply voltage (for analog circuitry)
Supply voltage
Digital input voltage
V
C10150
C10151
C10150
C10151
Operating temperature
Topr
Storage temperature
Tstg
°
C
I
Electrical characteristics
(Ta=25
°
C, V
D1
=+5 V, V
A1
+
=+15 V, V
A1
-
= -15 V, V
A2
=+24 V, V
D2
=+5 V, Vp=+5 V, V
F
=+12 V, unless otherwise noted)
Parameter
High level
Digital input
Low level
CLK frequency
Data video readout frequency
Start pulse width
High level (Io= -6 mA)
Digital output
Low level (Io=+6 mA)
Power supply operating conditions
Digital circuitry
Symbol
V
IH
V
IL
f
CLK
fv
tst
V
IH
V
IL
Min.
+2.0
-0.5
-
-
1/f
CLK
+2.0
-
Typ.
-
-
-
-
-
-
-
Max.
+5.0
+0.8
1
f
CLK
/4
-
-
+0.8
Unit
V
V
MHz
Hz
s
V
V
V
D
V
A1+
V
A1-
V
A2
V
D2
Vp
V
F
-
-
-
-
-
-
-
+4.75
+14.5
-14.5
+23.5
+4.75
+4.75
+11.75
-
-
-
-
-
-
-
+5.0
+15.0
-15.0
+24.0
+5.0
+5.0
+12.0
-
-
-
-
-
-
+100
+5.25
+15.5
-15.5
+24.5
+5.25
+5.25
+12.25
+200
+100
-100
+30
+30
+2.5
-
V
V
V
V
V
V
V
Analog circuitry
Voltage
Other
V
D1
(+5 VDC)
V
A1+
(+15 VDC)
V
A1-
(-15 VDC)
V
A2
(+24 VDC)
V
D2
(+5 VDC) *
4
Vp (+5 DC) *
4
V
F
(+12 VDC) *
4
mA
mA
mA
mA
mA
A
mA
Current
I
Electrical and optical characteristics
(Ta=25
°
C, Ts= -10
°
C, V
D1
=+5 V, V
A1
+
=+15 V, V
A1
-
= -15 V, V
A2
=+24 V, V
D2
=+5 V, Vp=+5 V, V
F
=+12 V,
unless otherwise noted)
Parameter
Symbol
Min.
Typ.
200 to
1100
75000
150000
56
100
1.5
20
7500
3750
±3
Max.
Unit
Spectral response range
λ
-
-
nm
Vertical
Horizontal
60000
120000
45
-
-
-
-
-
-
-
-
Full well capacity
Fw
e
-
Conversion gain *
5
Sv
67
μV/e
-
C10150 (Ta=25
°
C)
C10151 (Ta= -10
°
C)
1000
15
45
-
-
±10
Dark current *
6
DS
e
-
/pixels/s
Readout noise
Nr
e
-
rms
Line binning
Area scanning
Dynamic range
DR
-
Photo response non-uniformity *
7
*3: The maximum value may be lower, depending on the drive frequency and the number of sensor pixels.
*4: C10151
*5: Including the circuit gain.
*6: At MPP mode. Vertical register value. The actual value equals the sum of the vertical direction because of the binning
operation.
*7: Measured at 50 % of the full well capacity.
PRNU
%
2
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