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參數(shù)資料
| 型號(hào)： | C1004 |
| 廠商： | IMP INC. |
| 英文描述： | Process C1004 |
| 中文描述： | 工藝C1004 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | C1004 |
IMP, Inc.
ISO 9001 Registered
17
Process C1004
CMOS 1.0
μ
m
5 Volt Digital
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold
Symbol
VT
N
γ
N
β
N
Leff
N
W
N
BVDSS
N
VTF
P(N)
Minimum
0.55
Typical
0.75
0.60
87
0.75
0.8
Maximum
0.95
Unit
V
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
Comments
100x1.0
μ
m
100x1.0
μ
m
100x100
μ
m
100x1.0
μ
m
Per side
74
0.60
100
0.90
7
10
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
P
γ
P
β
P
Leff
P
W
P
BVDSS
P
VTF
P(P)
Minimum
–0.85
Typical
–1.0
0.4
28
0.98
0.85
Maximum
–1.15
Unit
V
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
Comments
100x1.0
μ
m
100x1.0
μ
m
100x100
μ
m
100x1.0
μ
m
Per side
24
0.83
32
1.13
–7
–10
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
Symbol
ρ
N-well(f)
N+
x
jN+
ρ
P+
x
jP+
T
GOX
T
FIELD
ρ
POLY
ρ
M1
ρ
M2
T
PASS
Minimum
0.8
20
Typical
1.0
35
0.45
80
0.5
20
700
22
50
30
200+900
Maximum
1.22
50
Unit
K
/
o
/
o
μ
m
/
o
μ
m
nm
nm
/
o
m
/
o
m
/
o
nm
Comments
n-well
60
100
15
30
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to SIlicon
Metal-2 to Metal-1
Symbol
C
ox
C
M1P
C
MIS
C
MM
Minimum
1.52
Typical
1.64
0.046
0.028
0.038
Maximum
1.82
Unit
fF/
μ
m
2
fF/
μ
m
2
fF/
μ
m
2
fF/
μ
m
2
Comments
Electrical Characteristics
T=25
o
C Unless otherwise noted
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