參數(shù)資料
型號: BZW03
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Voltage regulator diodes(電壓穩(wěn)壓二極管)
中文描述: 7.5 V, 6 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
文件頁數(shù): 6/9頁
文件大小: 48K
代理商: BZW03
1996 May 14
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZW03 series
Note
1.
Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8”(10/1000
μ
s pulse); see Fig.7.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
μ
m, see Fig.6.
For more information please refer to the “General Part of associated Handbook”
BZW03-C180
BZW03-C200
BZW03-C220
BZW03-C240
BZW03-C270
BZW03-C300
BZW03-C330
BZW03-C360
BZW03-C390
BZW03-C430
BZW03-C470
BZW03-C510
168
188
208
228
251
280
310
340
370
400
440
480
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
5
5
5
5
5
5
5
5
5
5
5
5
249
276
305
336
380
419
459
498
537
603
655
707
2.0
1.8
1.6
1.5
1.3
1.2
1.1
1.0
0.93
0.83
0.76
0.71
10
10
10
10
10
10
10
10
10
10
10
10
150
160
180
200
220
240
270
300
330
360
390
430
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25
75
K/W
K/W
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
V
(BR)R
(V)
at I
test
S
Z
(%/K) at I
test
I
test
(mA)
V
(CL)R
(V)
at I
RSM
(A)
note 1
I
R
(
μ
A)
at V
R
(V)
MIN.
MIN.
MAX.
MAX.
MAX.
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