參數(shù)資料
型號: BZV90-C9V1
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Voltage regulator diodes
中文描述: 穩(wěn)壓二極管
封裝: BZV90-C10<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,;BZV90-C11<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 20
文件頁數(shù): 2/9頁
文件大?。?/td> 176K
代理商: BZV90-C9V1
1999 May 17
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV90 series
FEATURES
Total power dissipation:
max. 1 500 mW
Tolerance series: approx.
±
5%
Working voltage range:
nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
General regulation functions.
DESCRIPTION
Medium-power voltage regulator
diodes in SOT223 plastic SMD
packages.
The diodes are available in the
normalized E24 approx.
±
5%
tolerance range. The series consists
of 37 types with nominal working
voltages from 2.4 to 75 V
(BZV90-C2V4 to C75).
PINNING
PIN
DESCRIPTION
1
anode
cathode
anode
2, 4
3
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
1
2
3
MAM242
Top view
2, 4
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm
2
.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
I
ZSM
continuous forward current
non-repetitive peak reverse current
see Table
“Per type”
400
mA
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge
T
amb
= 25
°
C; note 1
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.2
P
tot
P
ZSM
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
1 500
40
mW
W
T
stg
T
j
65
+150
150
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
I
F
= 50 mA; see Fig.3
1.0
V
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