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參數(shù)資料
| 型號： | BZV8530 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 表面貼裝硅穩(wěn)壓二極管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | BZV8530 |
1999 May 11
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV85 series
FEATURES
Total power dissipation:
max. 1.3 W
Tolerance series: approx.
±
5%
Working voltage range:
nom. 3.6 to 75 V (E24 range)
Non-repetitive peak reverse power
dissipation: max. 60 W.
APPLICATIONS
Stabilization purposes.
DESCRIPTION
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx.
±
5% tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
The diodes are type branded.
handbook, halfpage
MAM241
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
If the leads are kept at T
tp
= 55
°
C at 4 mm from body.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
I
ZSM
continuous forward current
non-repetitive peak reverse current
see Table
“Per type”
see Table
“Per type”
500
mA
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.3
t
p
= 10 ms; half sinewave;
T
j
= 25
°
C prior to surge
T
amb
= 25
°
C; lead length 10 mm;
note 1
note 2
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge
P
tot
total power dissipation
1
W
1.3
60
W
W
P
ZSM
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
T
stg
T
j
65
+200
200
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 50 mA; see Fig.4
1
V
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