參數(shù)資料
型號: BZV80
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
中文描述: 6.2 V, SILICON, VOLTAGE REFERENCE DIODE
封裝: GLASS, SMD, 2 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 20K
代理商: BZV80
1996 Mar 21
3
Philips Semiconductors
Product specification
Voltage reference diodes
BZV80; BZV81
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
The quoted values of
V
ref
are based on a constant current I
Z
. Two factors can cause
V
ref
to change with I
Z
, namely
the differential resistance r
dif
and the temperature coefficient S
Z
.
a) Each change of I
Z
can result in a maximum change of
V
ref
as follows:
V
ref
(mV) =
I
Z
(mA)
×
15
taking into account that r
dif
is max. 15
.
b) The temperature coefficient of the reference voltage S
Z
is also a function of I
Z
. However, for these reference
diodes S
Z
varies max.
±
0.05 mV/K or
±
0.001%/K when I
Z
is between 6 and 10 mA, so this effect can be neglected
in practice for these types.
2.
The temperature coefficient of the reference voltage is obtained from the following formula:
V
V
amb2
T
amb1
ref nom
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
NOM.
MAX.
UNIT
V
ref
V
ref
reference voltage
reference voltage excursion
BZV80
BZV81
temperature coefficient
BZV80
BZV81
differential resistance
I
Z
= 7.5 mA
I
Z
= 7.5 mA; test points for
T
amb
:
20; +25; +55; +80
°
C;
notes 1 and 2
5.89
6.20
6.51
V
62
31
mV
mV
S
Z
I
Z
= 7.5 mA: notes 1 and 2
0.01
0.005
15
%/K
%/K
r
dif
I
Z
= 7.5 mA
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
300
380
K/W
K/W
note 1
S
Z
T
100
V
×
=
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