參數(shù)資料
型號: BZV55
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Voltage Regulator Diodes
中文描述: 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
文件頁數(shù): 2/12頁
文件大?。?/td> 56K
代理商: BZV55
1999 May 21
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
FEATURES
Total power dissipation:
max. 500 mW
Two tolerance series:
±
2% and
approx.
±
5%
Working voltage range:
nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
Low-power voltage stabilizers or
voltage references.
DESCRIPTION
Low-power voltage regulator diodes in small hermetically sealed glass
SOD80C SMD packages. The diodes are available in the normalized E24
±
2%
(BZV55-B) andapprox.
±
5% (BZV55-C) tolerance range. The series consists of
37 types with nominal working voltages from 2.4 to 75 V.
Fig.1 Simplified outline (SOD80C) and symbol.
The cathode is indicated by a yellow band.
handbook, 4 columns
MAM215
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a ceramic substrate of 10
×
10
×
0.6 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
see Tables
1 and 2
MAX.
UNIT
I
F
I
ZSM
continuous forward current
non-repetitive peak reverse current
250
mA
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge
T
amb
50
°
C; note 1
tie-point
50
°
C; note 1
t
p
= 100
μ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.3
P
tot
total power dissipation
400
500
40
mW
mW
W
P
ZSM
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
T
stg
T
j
65
65
+200
+200
°
C
°
C
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