參數(shù)資料
型號: BZT52H-B10
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Single Zener diodes in a SOD123F package
中文描述: 10 V, 0.375 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 3/13頁
文件大小: 118K
代理商: BZT52H-B10
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
3 of 13
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
I
F
forward current
I
ZSM
non-repetitive peak
reverse current
[1]
t
p
= 100
μ
s; square wave; T
j
= 25
°
C prior to surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3]
Soldering point of cathode tab.
Limiting values
Conditions
Min
-
-
Max
250
see
Table 8
,
9
and
10
40
Unit
mA
P
ZSM
non-repetitive peak
reverse power dissipation
total power dissipation
[1]
-
W
P
tot
T
amb
25
°
C
[2]
-
375
830
150
+150
+150
mW
mW
°
C
°
C
°
C
[3]
-
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
-
65
65
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min
Typ
-
-
-
Max
330
150
70
Unit
K/W
K/W
K/W
[1]
-
[2]
-
R
th(j-sp)
thermal resistance from
junction to solder point
[3]
-
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