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參數(shù)資料
| 型號： | BZM55C33 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Epitaxial Planar Z-Diodes |
| 中文描述： | 硅外延平面的Z -二極管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 82K |
| 代理商： | BZM55C33 |
BZM55C...
Vishay Telefunken
Rev. 3, 01-Apr-99
1 (6)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85598
Silicon Epitaxial Planar Z–Diodes
Features
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BZT55C... / TZMC...
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
Applications
Voltage stabilization
96 12315
Absolute Maximum Ratings
T
j
= 25 C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
C
C
Maximum Thermal Resistance
T
j
= 25 C
Parameter
Junction ambient
mounted on epoxy–glass hard tissue, Fig. 1
Junction tie point
35 m copper clad, 0.9 mm
2
copper area per electrode
Test Conditions
Symbol
R
thJA
R
thJL
Value
500
300
Unit
K/W
K/W
Electrical Characteristics
T
j
= 25 C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
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