參數(shù)資料
型號: BZM55B56-TR
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 56 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝: HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2
文件頁數(shù): 4/7頁
文件大?。?/td> 162K
代理商: BZM55B56-TR
www.vishay.com
4
Document Number 85597
Rev. 2.0, 26-Aug-10
BZM55-Series
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
Figure 3. Temperature Coefficient of Vz vs. Z-Voltage
0
120
160
0
100
300
400
500
600
P
t
w
e
W
)
T
am
b
- Am
b
ient Temperat
u
re (°C)
200
95 9602
200
8
0
40
10
15
20
1
10
100
1000
V
Z
V
o
V
)
V
Z
- Z-
V
oltage (
V
)
25
95 959
8
T
j
= 25 °C
I
Z
= 5 mA
0
5
- 5
0
5
10
15
V
Z
- Z-
V
oltage (
V
)
95 9600
I
Z
= 5 mA
0
10
20
30
40
50
T
V
Z
u
r
o
V
Z
-
/
Figure 4. Diode Capacitance vs. Z-Voltage
Figure 5. Typical Change of Working Voltage vs.
Junction Temperature
Figure 6. Forward Current vs. Forward Voltage
10
15
0
50
100
150
200
C
D
V
Z
- Z-
V
oltage (
V
)
25
95 9601
20
T
j
= 25 °C
V
R
= 2
V
0
5
- 60
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Z
T
j
- Junction Temperature (°C)
240
95 9599
0
V
Ztn
= V
Zt
/V
Z
(25 °C)
0
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
2 x 10
-4
/K
4 x 10
-4
/K
- 4 x 10
-4
/K
- 2 x 10
-4
/K
0
0.2
V
F
- For
w
ard
V
oltage (
V
)
0.4
0.6
0.
8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I
F
w
a
u
r
T
j
= 25 °C
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