- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384168 > BZM55B3V9 (Vishay Intertechnology,Inc.) Silicon Epitaxial Planar Z-Diodes PDF資料下載
參數(shù)資料
| 型號(hào)： | BZM55B3V9 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Epitaxial Planar Z-Diodes |
| 中文描述： | 硅外延平面的Z -二極管 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 82K |
| 代理商： | BZM55B3V9 |
BZM55B...
Vishay Telefunken
Rev. 3, 01-Apr-99
6 (6)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85597
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BZM55B43 | Silicon Epitaxial Planar Z-Diodes |
| BZM55B47 | Silicon Epitaxial Planar Z-Diodes |
| BZM55B4V7 | Silicon Epitaxial Planar Z-Diodes |
| BZM55B5V6 | Silicon Epitaxial Planar Z-Diodes |
| BZM55B10 | Silicon Epitaxial Planar Z-Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BZM55-B3V9 | 制造商:GOOD-ARK 制造商全稱:GOOD-ARK Electronics 功能描述:Zener Diodes |
| BZM55B3V9 _R1 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| BZM55B3V9_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| BZM55B3V9-TR | 功能描述:穩(wěn)壓二極管 3.9 Volt 0.5W 2% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| BZM55B3V9-TR3 | 功能描述:穩(wěn)壓二極管 3.9 Volt 0.5W 2% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。