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參數(shù)資料
| 型號(hào)： | BZD27-C6V8 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Voltage regulator diodes |
| 中文描述： | 6.8 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大小： | 38K |
| 代理商： | BZD27-C6V8 |
1996 Jun 10
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
Note
1.
Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8”(10/1000
μ
s pulse); see Fig.8.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.7.
For more information please refer to the “General Part of associated Handbook”
BZD27-C180
BZD27-C200
BZD27-C220
BZD27-C240
BZD27-C270
BZD27-C300
BZD27-C330
BZD27-C360
BZD27-C390
BZD27-C430
BZD27-C470
BZD27-C510
168
188
208
228
251
280
310
340
370
400
440
480
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
5
5
2
2
2
2
2
2
2
2
2
2
249
276
305
336
380
419
459
498
537
603
655
707
0.60
0.54
0.50
0.45
0.40
0.36
0.33
0.30
0.28
0.25
0.23
0.21
5
5
5
5
5
5
5
5
5
5
5
5
150
160
180
200
220
240
270
300
330
360
390
430
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
thermal resistance from junction to ambient
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
55
30
K/W
K/W
R
th j-a
note 1
175
150
K/W
K/W
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURREN
T
CLAMPING
VOLTAGE
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
V
(BR)R
(V)
at I
test
S
Z
(%/K) at I
test
I
test
(mA)
V
(CL)R
(V)
at I
RSM
(A)
note 1
I
R
(
μ
A)
at V
R
(V)
MIN.
MIN.
MAX.
MAX.
MAX.
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|---|---|
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| BZD27-C6V8P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Zener Diodes |
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