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參數(shù)資料
| 型號(hào)： | BZD142-68 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | ZenBlockTM; zener with integrated blocking diode |
| 中文描述： | 68 V, 2.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | BZD142-68 |
2001 Oct 10
3
Philips Semiconductors
Product specification
ZenBlock
TM
; zener with
integrated blocking diode
BZD142W
ELECTRICAL CHARACTERISTICS ZENER/TVS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
To complete the type number the suffix is added to the basic type number, e.g. BZD142W-68.
Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8”(10/1000
μ
s pulse); see Fig.5.
ELECTRICAL CHARACTERISTICS BLOCKING DIODE
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.4.
For more information please refer to the “General Part of associated Handbook”
TYPE
NUMBER
SUFFIX
(1)
WORKING VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
REVERSECURRENT
at STAND-OFF
VOLTAGE
V
Z
(V) at I
test
S
Z
(%/K) at I
test
I
test
(mA)
V
(CL)R
(V)
at I
RSM
(A)
(2)
I
R
(
μ
A)
at V
R
(V)
MIN.
NOM.
MAX.
MIN.
0.07
0.07
0.07
0.07
0.07
MAX.
0.12
0.12
0.12
0.12
0.12
MAX.
106
139
224
250
277
MAX.
5
5
5
5
5
68
100
160
180
200
61
90
68
75
10
0.94
0.72
0.45
0.40
0.36
56
82
130
150
160
100
160
180
200
110
171
198
220
5
5
5
5
149
162
180
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)R
reverse avalanche breakdown
voltage
reverse current
I
R
= 0.1 mA
700
V
I
R
V
R
= 600 V
V
R
= 600 V; T
j
= 150
°
C
f = 1 MHz; V
R
= 0 V;
see Fig.3
15
5
100
μ
A
μ
A
pF
C
d
diode capacitance
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
150
K/W
K/W
note 1
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