參數(shù)資料
型號(hào): BYW29(F)
廠商: 意法半導(dǎo)體
英文描述: High Efficiency Fast Recovery Rectifier Diodes(高效快速恢復(fù)整流二極管)
中文描述: 高效快速恢復(fù)整流二極管(高效快速恢復(fù)整流二極管)
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 351K
代理商: BYW29(F)
0.001
0.01
0.1
1
0
10
20
30
40
50
60
IM
t
=0.5
t(s)
IM(A)
Tc=25 C
Tc=50 C
Tc=100
C
o
Fig.7 :
Non repetitive surge peak forward current
versus overload duration.
(ISOWATT220AC)
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
9
10
T
=tp/T
tp
=0.5
F(av)(A)
I
o
Tamb( C)
Rth(j-a)=15
C/W
o
Rth(j-a)=Rth(j-c)
Fig.8
temperature.
(
δ
: 0.5) (TO-220AC)
:
Average
current
versus
ambient
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
9
10
T
=tp/T
tp
=0.5
F(av)(A)
I
o
Tamb( C)
Rth(j-a)=15
C/W
o
Rth(j-a)=Rth(j-c)
Fig.9
temperature.
(
δ
: 0.5) (ISOWATT220AC)
:
Average
current
versus
ambient
C(pF)
VR(V)
F=1Mhz Tj=25 C
Fig.10 :
Junction capacitance versus reverse
voltage applied (Typical values).
0.001
0.01
0.1
1
0
10
20
30
40
50
60
70
80
IM
t
=0.5
t(s)
IM(A)
Tc=25 C
Tc=75 C
Tc=120
C
o
Fig.6 :
Non repetitive surge peak forward current
versus overload duration.
(TO-220AC)
QRR(nC)
IF=IF(av)
90%CONFIDENCE Tj-100
C
dIF/dt(A/us)
O
Fig.11 :
Recovery charges versus dI
F
/dt.
BYW29(F)
4/6
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