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參數(shù)資料
| 型號： | BYW28 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Ultra fast low-loss controlled avalanche rectifier |
| 中文描述： | 超高速低損失控制雪崩整流器 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | BYW28 |
1997 Nov 26
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYW28 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability.
DESCRIPTION
Rugged glass SOD115 package,
using a high temperature alloyed
construction.
The package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD115) and symbol.
handbook, halfpage
a
MAM384
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYW28-500
BYW28-600
continuous reverse voltage
BYW28-500
BYW28-600
average forward current
500
600
V
V
V
R
500
600
V
V
A
I
F(AV)
T
tp
= 85
°
C; lead length = 10 mm;
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
T
amb
= 60
°
C; printed-circuit board
mounting (see Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
T
tp
= 85
°
C; see Fig.4
T
amb
= 60
°
C; see Fig.5
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
4
1.7
A
I
FRM
repetitive peak forward current
46
21
A
A
A
I
FSM
non-repetitive peak forward current
170
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
20
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
see Fig.7
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