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參數(shù)資料
| 型號(hào)： | BYV32E-100 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual ultrafast power diode |
| 封裝： | BYV32E-100<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 136K |
| 代理商： | BYV32E-100 |
BYV32E-100_4
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 2 March 2009
4 of 9
NXP Semiconductors
BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V
5.
Thermal characteristics
6.
Characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode; see
Figure 3
Min
-
Typ
-
Max
1.6
Unit
K/W
-
-
2.4
K/W
R
th(j-a)
thermal resistance from
junction to ambient
-
60
-
K/W
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
003aac980
1
10
1
10
Z
th(j-mb)
(K/W)
10
3
10
2
t
p
(s)
10
6
10
1
10
1
10
5
10
3
10
2
10
4
t
p
t
p
T
T
P
t
δ
=
Table 6.
Symbol
Static characteristics
V
F
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
I
F
= 20 A; T
j
= 25 °C
V
R
= 100 V; T
j
= 100 °C
V
R
= 100 V; T
j
= 25 °C
-
-
-
-
0.72
1
0.2
6
0.85
1.15
0.6
30
V
V
mA
μA
I
R
reverse current
Dynamic characteristics
Q
r
recovered charge
I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/μs;
T
j
= 25 °C
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
ramp recovery; T
j
= 25 °C; see
Figure 5
I
F
= 0.5 A; I
R
= 1 A; measured at reverse
current = 0.25 A; step recovery; T
j
= 25 °C;
see
Figure 6
I
F
= 1 A; dI
F
/dt = 10 A/μs; T
j
= 25 °C; see
Figure 7
-
8
12.5
nC
t
rr
reverse recovery time
-
20
25
ns
-
10
20
ns
V
FR
forward recovery
voltage
-
-
1
V
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參數(shù)描述 |
|---|---|
| BYV32E-100,127 | 功能描述:整流器 RAIL REC-DD RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYV32E-100127 | 制造商:NXP Semiconductors 功能描述: |
| BYV32E150 | 制造商:PHILIPS 功能描述:* |
| BYV32E-150 | 功能描述:整流器 RAIL REC-EPI RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYV32E-150,127 | 功能描述:整流器 RAIL REC-EPI RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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