參數(shù)資料
型號(hào): BYV29FB-600
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Enhanced ultrafast power diode
中文描述: 9 A, 600 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 4/12頁
文件大?。?/td> 218K
代理商: BYV29FB-600
BYV29FB-600
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
4 of 12
NXP Semiconductors
BYV29FB-600
Enhanced ultrafast power diode
5.
Thermal characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Conditions
see
Figure 4
Min
-
Typ
-
Max
2.5
Unit
K/W
R
th(j-a)
in free air
[1]
-
50
-
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse width
001aag913
1
10
1
10
Z
th(j-mb)
(K/W)
10
3
10
2
t
p
(s)
10
6
10
1
10
1
10
5
10
3
10
2
10
4
t
p
t
p
T
T
P
t
δ
=
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