參數(shù)資料
型號: BYV25FD-600
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Enhanced ultrafast power diode
中文描述: 600 V, SILICON, RECTIFIER DIODE, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁數(shù): 2/12頁
文件大?。?/td> 295K
代理商: BYV25FD-600
BYV25FD-600
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
2 of 12
NXP Semiconductors
BYV25FD-600
Enhanced ultrafast power diode
2.
Pinning information
[1]
It is not possible to connect to pin 2 of the SOT428 package.
3.
Ordering information
4.
Limiting values
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
n.c.
not connected
K
cathode
[1]
A
anode
K
mounting base; cathode
Simplified outline
Graphic symbol
SOT428 (DPAK)
3
2
mb
1
A
001aaa020
K
Table 3.
Type number
Ordering information
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BYV25FD-600
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
Conditions
Min
-
-
-
-
Max
600
600
600
5
Unit
V
V
V
A
DC
square-wave pulse;
δ
= 0.5 ;
T
mb
121 °C; see
Figure 1
;
see
Figure 2
square-wave pulse;
δ
= 0.5 ; t
p
= 25 μs;
T
mb
121 °C
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C; see
Figure 3
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C; see
Figure 3
I
FRM
repetitive peak forward current
-
10
A
I
FSM
non-repetitive peak forward
current
-
60
A
-
66
A
T
stg
T
j
storage temperature
junction temperature
-40
-
150
150
°C
°C
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