參數(shù)資料
型號: BYV25FB-600
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Enhanced ultrafast power diode
中文描述: 600 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 5/12頁
文件大小: 287K
代理商: BYV25FB-600
BYV25FB-600
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
5 of 12
NXP Semiconductors
BYV25FB-600
Enhanced ultrafast power diode
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
F
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
I
F
= 5 A; T
j
= 25 °C; see
Figure 5
I
F
= 5 A; T
j
= 150 °C; see
Figure 5
V
R
= 600 V; T
j
= 100 °C
V
R
= 600 V; T
j
= 25 °C
-
-
-
-
1.3
1.1
-
-
1.9
1.7
1.5
50
V
V
mA
μA
I
R
reverse current
Dynamic characteristics
Q
r
recovered charge
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
T
j
= 25 °C; see
Figure 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
T
j
= 25 °C; see
Figure 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
T
j
= 25 °C; see
Figure 6
I
F
= 1 A; dI
F
/dt = 100 A/μs; T
j
= 25 °C;
see
Figure 7
-
13
-
nC
t
rr
reverse recovery time
-
17.5
35
ns
I
RM
peak reverse recovery
current
forward recovery
voltage
-
1.5
-
A
V
FRM
-
3.2
-
V
V
o
= 1.50 V; R
s
= 0.041
(1) T
j
= 150 °C; typical values;
(2) T
j
= 150 °C; maximum values;
(3) T
j
= 25 °C; maximum values;
Forward current as a function of forward
voltage
Fig 5.
Fig 6.
Reverse recovery definitions; ramp recovery
003aaf445
V
F
(A)
0
3
2
1
8
12
4
16
20
I
F
(A)
0
(1)
(2)
(3)
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
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