參數(shù)資料
型號(hào): BYT79-500
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Ultrafast power diode
封裝: BYT79-500<SOD59 (TO-220AC)|<<http://www.nxp.com/packages/SOD59.html<1<week 1, 2005,;
文件頁數(shù): 3/7頁
文件大?。?/td> 114K
代理商: BYT79-500
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast
BYT79 series
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 15 A; T
j
= 150C
I
F
= 30 A
V
R
= V
RRM
V
= V
; T
j
= 100 C
I
F
= 2 A to V
R
30 V;
dI
/dt = 20 A/
μ
s
I
F
= 1 A to V
30 V;
dI
/dt = 100 A/
μ
s
I
F
= 10 A to V
R
30 V;
dI
/dt = 50 A/
μ
s; T
= 100C
I
F
= 10 A; dI
F
/dt = 10 A/
μ
s
-
-
-
-
-
0.90
1.17
5.0
0.2
50
1.05
1.38
50
0.8
60
V
V
μ
A
mA
nC
I
R
Reverse current
Q
s
Reverse recovery charge
t
rr
Reverse recovery time
-
50
60
ns
I
rrm
Peak reverse recovery current
-
4.0
5.2
A
V
fr
Forward recovery voltage
-
2.5
-
V
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
= f(I
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs
100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
0
5
10
15
20
25
0
5
10
15
20
25
D = 1.0
0.5
0.2
0.1
BYT79
Rs = 0.0095 Ohms
IF(AV) / A
PF / W
Tmb(max) / C
150
140
130
120
110
100
D =
t
p
t
p
T
T
t
I
time
time
VF
Vfr
VF
IF
0
5
10
15
0
5
10
15
20
1.9
4
BYT79
IF(AV) / A
PF / W
a = 1.57
2.2
2.8
Tmb(max) / C
150
140
130
120
110
Vo = 0.9075 V
Rs = 0.0095 Ohms
September 1998
2
Rev 1.300
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