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參數(shù)資料
| 型號： | BYT08P-400 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | FAST RECOVERY RECTIFIER DIODES |
| 中文描述： | 快速恢復(fù)整流二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | BYT08P-400 |
Synbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
T
j
= 25
°
C
V
R
= V
RRM
35
μ
A
T
j
= 100
°
C
2
mA
V
F
T
j
= 25
°
C
I
F
= 8A
1.9
V
T
j
= 100
°
C
1.8
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
T
j
= 25
°
C
I
F
= 1A di
F
/dt = - 15A/
μ
s V
R
= 30V
155
ns
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
65
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
IRM
di
F
/dt = - 32A/
μ
s
V
CC
= 200 V I
F
= 8A
L
p
≤
0.05
μ
H T
j
= 100
°
C
See Figure 1
200
ns
di
F
/dt = - 64A/
μ
s
120
I
RM
di
F
/dt = - 32A/
μ
s
5.5
A
di
F
/dt = - 64A/
μ
s
6
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C = V
RP
V
CC
T
j
= 100
°
C V
CC
= 200V I
F
= I
F (AV)
d
iF
/dt = - 8A/
μ
s L
p
= 2
μ
H See figure 2
4.5
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
To evaluate the conduction losses use the following equation:
V
F
= 1.47 + 0.04 I
F
P = 1.47 x I
F(AV)
+ 0.04 I
F2(RMS)
2/4
BYT 08PI-1000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BYT08PI-1000 | FAST RECOVERY RECTIFIER DIODE |
| BYT08PI-400 | FAST RECOVERY RECTIFIER DIODES |
| BYT08P1000 | Fast Recovery Silicon Power Rectifier |
| BYT08P1000A | Fast Recovery Silicon Power Rectifier |
| BYT12PI-1000RG | Ultra low drop-low noise BiCMOS voltage regulators low ESR capacitors compatible |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BYT08P-400 | 制造商:STMicroelectronics 功能描述:DIODE FAST RECOVERY 8A |
| BYT08P-400_02 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:FAST RECOVERY RECTIFIER DIODES |
| BYT08P600A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Fast Recovery Silicon Power Rectifier |
| BYT08P800A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Fast Recovery Silicon Power Rectifier |
| BYT08PI-1000 | 制造商:STMicroelectronics 功能描述:DIODE FAST RECOVERY 8A |
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