參數(shù)資料
型號: BYQ28X-200
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Dual ultrafast power diode
封裝: BYQ28X-200<SOT186A (TO-220F)|<<http://www.nxp.com/packages/SOT186A.html<1<week 32, 2004,;
文件頁數(shù): 3/10頁
文件大?。?/td> 138K
代理商: BYQ28X-200
BYQ28X-200_2
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 5 February 2009
3 of 10
NXP Semiconductors
BYQ28X-200
Dual ultrafast rugged rectifier diode
4.
Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
RRM
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average output current
Conditions
Min
-
Max
200
Unit
V
V
RWM
-
200
V
V
R
I
O(AV)
DC
SQW;
δ
= 0.5; T
h
92 °C; both diodes conducting;
see
Figure 1
; see
Figure 2
SQW;
δ
= 0.5; t
p
= 25 μs; T
h
92 °C; per diode
-
-
200
10
V
A
I
FRM
repetitive peak forward
current
non-repetitive peak
forward current
-
10
A
I
FSM
t
p
= 10 ms; SIN; T
j(init)
= 25 °C; per diode
t
p
= 8.3 ms; SIN; T
j(init)
= 25 °C; per diode
t
p
= 2 μs;
δ
= 0.001
-
-
-
50
55
0.2
A
A
A
I
RRM
repetitive peak reverse
current
non-repetitive peak
reverse current
storage temperature
junction temperature
I
RSM
t
p
= 100 μs
-
0.2
A
T
stg
T
j
Electrostatic discharge
V
ESD
-40
-
150
150
°C
°C
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 k
; all pins
-
8
kV
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
I
F(AV)
(A)
0
8
6
2
4
001aag976
4
2
6
8
P
tot
(W)
0
δ
= 1
0.2
0.1
0.5
001aag977
I
F(AV)
(A)
0
6
4
2
2
4
6
P
tot
(W)
0
a = 1.57
2.2
2.8
4.0
1.9
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